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Hall Effect in Organic Single-crystal Field-effect Transistors

Published online by Cambridge University Press:  01 February 2011

Jun Takeya ,
Koichi Yamada ,
Kazuhito Tsukagoshi ,
Yoshinobu Aoyagi ,
Taishi Takenobu  and
Yoshihiro Iwasa
Jun Takeya
Affiliation:
[email protected], Osaka University, Chemistry, 1-1, Machikaneyama, Toyonaka, Osaka, 560-0043, Japan
Koichi Yamada
Affiliation:
[email protected], CRIEPI, Tokyo, N/A, 201-8511, Japan
Kazuhito Tsukagoshi
Affiliation:
[email protected], RIKEN, Wako, N/A, 351-0198, Japan
Yoshinobu Aoyagi
Affiliation:
[email protected], RIKEN, Wako, N/A, 351-0198, Japan
Taishi Takenobu
Affiliation:
[email protected], IMR, Tohoku University, Sendai, N/A, 980-8577, Japan
Yoshihiro Iwasa
Affiliation:
[email protected], IMR, Tohoku University, Sendai, N/A, 980-8577, Japan
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Abstract

We report Hall effect of charge carriers accumulated in organic field-effect transistors. Rubrene (C42H28) single crystals are shaped in to the Hall-bar congiguration in the devices so that the Hall signal is appropriately detected in external magnetic fields. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The observation of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system. The direct access to the density of mobile charge carriers provides a tool to understand nontrivial features of organic field-effect transistors such as gate electric field dependent mobility.

Keywords

organicsemiconductingelectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 937: Symposium M – Conjugated Organic Materials – Synthesis, Structure, Device, and Applications , 2006 , 0937-M10-06
Copyright
Copyright © Materials Research Society 2006

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