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Hafnium-related Photoluminescence in Single Crystal Silicon

Published online by Cambridge University Press:  01 February 2011

R. Sachdeva ,
A. A. Istratov ,
Wei Shan ,
P. N. K. Deenapanray  and
E.R. Weber
R. Sachdeva
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, MS 62-203, 1 Cyclotron Rd., Berkeley, CA 94720
A. A. Istratov
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, MS 62-203, 1 Cyclotron Rd., Berkeley, CA 94720
Wei Shan
Affiliation:
Lawrence Berkeley National Laboratory, MS 62-203, 1 Cyclotron Rd., Berkeley, CA 94720
P. N. K. Deenapanray
Affiliation:
Center for Sustainable Energy Systems, The Australian National University, Canberra, Australia 0200
E.R. Weber
Affiliation:
Department of Materials Science and Engineering, University of California, Berkeley, CA 94720 Lawrence Berkeley National Laboratory, MS 62-203, 1 Cyclotron Rd., Berkeley, CA 94720
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Abstract

A new photoluminescence (PL) band in the energy range of 700 meV to 950 meV associated with hafnium implanted in silicon is reported. A shift in the position of photoluminescence peaks observed on the samples implanted with two different isotopes of Hf confirms the Hfrelated origin of the observed photoluminescence band. Activation of the Hf-optical centers requires a 1000°C anneal step. The intensity of the PL lines depends on the cooling conditions. The spectrum consists of five peaks in the rapidly quenched sample as opposed to twenty one in the slowly cooled sample. Temperature dependent PL measurements and hydrostatic pressure measurements were performed to identify their nature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 866 , 2005 , V6.6
Copyright
Copyright © Materials Research Society 2005

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