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Hacroscopic Defects in Epitaxial Silicon on Simox and in Annealed SIMOX

Published online by Cambridge University Press:  28 February 2011

A. Mogro-Campero ,
N. Lewis  and
S.A. Al-Marayati
A. Mogro-Campero
Affiliation:
GE Research and Development Center, P.O. Box 8, Schenectady, N.Y. 12301
N. Lewis
Affiliation:
GE Research and Development Center, P.O. Box 8, Schenectady, N.Y. 12301
S.A. Al-Marayati
Affiliation:
GE Research and Development Center, P.O. Box 8, Schenectady, N.Y. 12301
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Abstract

Epitaxial silicon layers of 5¼m were grown on SIMOX wafers. The dislocation density decreases by more than an order of magnitude as a function of distance away from the buried oxide. Shallow pits (about 0.5 urn deep and several um wide) are observed on the epitaxial layer with a density of 1-2 mm2. Their density did not change with various processing variations. A search for the origin of the pits by transmission electron microscopy reveals that they may be associated with regions of irregularly thin and sometimes missing buried oxide, which appear after the usual high temperature SIMOX annealing step. These defective regions in the buried oxide appear to initiate twinned growth in the epitaxial silicon, and are associated with pits at the top epitaxial silicon surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 123
Copyright
Copyright © Materials Research Society 1988

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