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H2-Dilution vs. Buffer Layers for Increased Voc

Published online by Cambridge University Press:  10 February 2011

R. Platz ,
D. Fischer ,
C. Hof ,
S. Dubail ,
J. Meier ,
U. Kroll  and
A. Shah
R. Platz
Affiliation:
Institut de Microtechnique, Université de Neuchâtel Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
D. Fischer
Affiliation:
Institut de Microtechnique, Université de Neuchâtel Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
C. Hof
Affiliation:
Institut de Microtechnique, Université de Neuchâtel Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
S. Dubail
Affiliation:
Institut de Microtechnique, Université de Neuchâtel Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
J. Meier
Affiliation:
Institut de Microtechnique, Université de Neuchâtel Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
U. Kroll
Affiliation:
Institut de Microtechnique, Université de Neuchâtel Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchâtel Rue A.-L. Breguet 2, CH-2000 Neuchâtel, Switzerland
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Abstract

Hydrogen dilution and buffer layers, as two ways to obtain higher Voc values in a-Si:H p-i-n solar cells, are directly compared in the present study. Special emphasis is laid on stability against light soaking. H2-dilution in combination with lower substrate temperature yields higher Voc values and better stability as compared to buffer layers. However, light absorption is decreased due to the increased gap in H2-diluted cells. The stability of buffer layer cells can remarkably be ameliorated by boron doping and H2-dilution of the a-SiC:H buffer layer. However, stabilized efficiency is higher for optimized diluted cells than for cells with a buffer layer. An a-Si/a-Si stacked cell with a graded dilution for both cells yielded 10% initial efficiency with 17% relative degradation. Diluted a-Si:H cells at lower temperature become specially interesting in combination with a microcrystalline bottom cell. For such a “micromorph” tandem cell we obtained 11.4% initial efficiency.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 51
Copyright
Copyright © Materials Research Society 1996

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