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Growth Temperature Dependence of Size Distribution of Selfassembled Inas Quantum Dots on Gaas(001): From Diffusion- to Strain-Limited Growth

Published online by Cambridge University Press:  10 February 2011

J. Yuan ,
G. D. Lian ,
Z. Y. Li ,
D. A. Ritchie ,
R. M. Thompson ,
A. J. Shields ,
I. Farrer  and
L. M. Brown
J. Yuan*
Affiliation:
Cavendish Laboratory, Cambridge University, Madingley Road, Cambridge CB3 0HE, U.K.
G. D. Lian
Affiliation:
Cavendish Laboratory, Cambridge University, Madingley Road, Cambridge CB3 0HE, U.K.
Z. Y. Li
Affiliation:
Cavendish Laboratory, Cambridge University, Madingley Road, Cambridge CB3 0HE, U.K.
D. A. Ritchie
Affiliation:
Cavendish Laboratory, Cambridge University, Madingley Road, Cambridge CB3 0HE, U.K.
R. M. Thompson
Affiliation:
Cavendish Laboratory, Cambridge University, Madingley Road, Cambridge CB3 0HE, U.K.
A. J. Shields
Affiliation:
Toshiba Research Europe Ltd., 260 Science Park, Milton Road, Cambridge CB4 0WE, U.K.
I. Farrer
Affiliation:
Cavendish Laboratory, Cambridge University, Madingley Road, Cambridge CB3 0HE, U.K.
L. M. Brown
Affiliation:
Cavendish Laboratory, Cambridge University, Madingley Road, Cambridge CB3 0HE, U.K.
*
1Corresponding author.
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Abstract

We have investigated the molecular beam epitaxy (MBE) growth of buried InAs quantum dots on GaAs (001) surface, as a function of deposition temperature, by transmission electron microscopy (TEM) and photoluminescence (PL). We found that the dot growth at low temperature is controlled by diffusion-limited aggregation. As the growth temperature increases, this growth mode is modified by misfit strain, resulting in a narrowing of the size distribution. However, we did not find any evidence for a thermodynamically optimized size. In addition, we found that the optical properties of the quantum dots does not correlate directly with the geometric size of the quantum dots, indicating a complex internal structure for quantum dots grown at high growth temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 583 , 1999 , 63
Copyright
Copyright © Materials Research Society 2000

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Footnotes

2

Present address: Department of Chemical and Materials Engineering, University of Kentucky, 177 Anderson Hall, Lexington KY, 40506-00046, U.S.A.

References

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