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Growth Studies and X-Ray Topographical Assessment of KTP

Published online by Cambridge University Press:  15 February 2011

K B Hutton ,
R C C Ward  and
K W Godfrey
K B Hutton
Affiliation:
University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
R C C Ward
Affiliation:
University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
K W Godfrey
Affiliation:
University of Oxford, Clarendon Laboratory, Parks Road, Oxford, OX1 3PU, UK
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Abstract

Device quality single crystals of potassium titanyl phosphate (KTP) have been grown using a top seeded solution growth method which incorporates a crystal weighing facility and which takes advantage of saturation temperatures well below the accepted transition temperature of this material. Weight and crucible temperature data are received and displayed on a monitoring computer in the form of a growth profile. Results obtained from the growth programme are discussed including the effect of very slow cooling (< 0.03 °C/hr) on the control of growth quality and a study of growth defects using x-ray diffraction topography carried out using synchrotron radiation. Variations on the standard K6P4O13 flux were investigated, including the addition of CeO2 to improve optical transmission and the use of K7P3O11 as an alternative growth solution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 329: Symposium R – New Materials for Advanced Solid State Lasers , 1993 , 23
Copyright
Copyright © Materials Research Society 1994

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References

1. Bierlein, J.D. and Vanherzeele, H., J. Opt. Soc. Am. B/6 No. 4, 622 (1989)Google Scholar
2. Bordui, P.F., Jacco, J.C., Loiacono, G.M. and Zola, J.J., J. Crystal Growth 84, 403 (1987)Google Scholar
3. Sasaki, T., Miyamoto, A., Yokotani, A. and Nakai, S., J. Crystal Growth 128, 950 (1993)CrossRefGoogle Scholar
4. Bolt, R.J., van der Mooren, M.H. and Haas, H. de, J. Crystal Growth 114, 141 (1991)CrossRefGoogle Scholar
5. Thomas, P.A., Tebbutt, I.J. and Glazer, M., J. Appl. Cryst. 24, 963 (1991)Google Scholar
6. Bordui, P.F., Blachman, R. and Norwood, R.G., Appl. Phys. Lett. 61 (12), 1369 (1992)Google Scholar
7. Iliev, K., Peshev, P., Nikolov, V. and Koseva, I., J. Crystal Growth 100, 219 (1990)Google Scholar
8. Blasse, G., J. Alloys and Compounds 194, 139 (1993)Google Scholar