Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-27T02:24:10.198Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth Stress in CVD-WGex Films Deposited by Reduction of WF6 by GeH4

Published online by Cambridge University Press:  15 February 2011

G.J. Leusink ,
T.G.M. Oosterlaken ,
G.C.A.M. Janssen  and
S. Radelaar
G.J. Leusink
Affiliation:
Delft Institute for Microelectronics and Submicron technology (DIMES), Delft University of Technology, P.O. Box 5046, 2600 GA, Delft, The Netherlands.
T.G.M. Oosterlaken
Affiliation:
Delft Institute for Microelectronics and Submicron technology (DIMES), Delft University of Technology, P.O. Box 5046, 2600 GA, Delft, The Netherlands.
G.C.A.M. Janssen
Affiliation:
Delft Institute for Microelectronics and Submicron technology (DIMES), Delft University of Technology, P.O. Box 5046, 2600 GA, Delft, The Netherlands.
S. Radelaar
Affiliation:
Delft Institute for Microelectronics and Submicron technology (DIMES), Delft University of Technology, P.O. Box 5046, 2600 GA, Delft, The Netherlands.
Get access

Abstract

Growth stresses in thin metal films on a substrate are important for integrated circuit device fabrication and reliability. The development of growth stress in blanket CVD-WGex films deposited by GeH4 reduction of WF6 is studied by in situ wafer curvature measurements. Depending on process conditions, the growth stress varies from 600 MPa tensile in β-WGex films deposited at low temperatures (T < 400 °C) to 400 MPa compressive in α-WGex films deposited at high temperatures (T > 400 °C). At very low temperatures amorphous WGex films grow without significant stress. Development of tensile growth stress is favoured by low temperatures and high growth rates, whereas development of compressive growth stress is favoured by high temperatures and low growth rates. Although the material properties of CVD-WGex films depend on process conditions, the development of growth stress in these films shows a dependence on deposition temperature and growth rate which is similar to pure α-W films deposited by H2 reduction of WF6. The results will be discussed in view of a model which has recently been put forward to explain development of growth stress in polycrystalline metal films on a substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 27
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 See for example the papers contained in "Tungsten and other Refractory Metals for VLSI Applications I – IV, 1985–1988", "Tungsten and other Advanced Metals for VLSI/ULSI applications 1989, 1990 and 1991" and "Advanced Metallization for ULSI Applications 1992", Materials Research Society, Pittsburgh, PA.Google Scholar
2 Klokholm, E. and Berry, B.S., J. Electrochem. Soc. 115, 823 (1968).CrossRefGoogle Scholar
3 Leusink, G.J., Oosterlaken, T.G.M., Janssen, G.C.A.M. and Radelaar, S., Submitted for publication in J. Appl. Phys. Google Scholar
4 Abermann, R., MRS Symp. Proc. 239, 25 (1992).Google Scholar
5 Winau, D., Koch, R., Führmann, A. and Rieder, K.H., J. Appl. Phys. 70, 3081 (1991).Google Scholar
6 van der Jeugd, C.A., Leusink, G.J., Janssen, G.C.A.M. and Radelaar, S., Appl. Phys. Lett. 57, 354 (1990).Google Scholar
7 van der Jeugd, C.A., Leusink, G.J., Janssen, G.C.A.M. and Radelaar, S., J. Appl. Phys. 70, 2353 (1991).Google Scholar
8 van der Jeugd, C.A., Leusink, G.J., Oosterlaken, T.G.M., Nanver, L.K., Alkemade, P.F.A., Goudena, E.J.G., Janssen, G.C.A.M. and Radelaar, S., J. Electrochem. Soc. 139, 12 (1992).Google Scholar
9 Oosterlaken, T.G.M., Leusink, G.J., Janssen, G.C.A.M. and Radelaar, S., to be published in Appl. Surf. Sci. Google Scholar
10 Leusink, G.J., Oosterlaken, T.G.M., Janssen, G.C.A.M. and Radelaar, S., Rev. Sci. Instrum. 63, 3143 (1992).Google Scholar
11 Leusink, G.J., Kleijn, C.R., Oosterlaken, T.G.M., Janssen, G.C.A.M. and Radelaar, S., J. Appl. Phys. 72, 490–498 (1992).Google Scholar
12 Kleijn, C.R., private communication.Google Scholar