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Growth Rate Limiting and Carbon Reduction Processes for GaAs Grown by Alternate Gas Supply using H2 and N2 Carrier Gases

Published online by Cambridge University Press:  16 February 2011

M. Shinohara ,
Y. Yokoyama  and
N. Inoue
M. Shinohara
Affiliation:
NTT LSI Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, Japan
Y. Yokoyama
Affiliation:
NTT LSI Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, Japan
N. Inoue
Affiliation:
NTT LSI Laboratories 3-1, Morinosato Wakamiya, Atsugi-shi, Kanagawa, Japan
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Abstract

Processes limiting the growth of GaAs grown by an alternate gas supply are investigated by kinematical analysis. Based on these results, it is shown that the atomic layer epitaxial (ALE) window is expanded on the high temperature by the suppression of the decomposition of column III gas sources using a nitrogen carrier gas and on the low temperature side by the enhancement of their chemisorption to substrate surface atoms by a new method using a cracking tube. The latter enables us to achieve ALE of AlAs for the first time. Moreover, the carbon concentration is reduced by one order of magnitude by such a reaction control.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 139
Copyright
Copyright © Materials Research Society 1991

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References

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