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Growth of ZnSxSe1−x by Mbe Using An Electrochemical Sulphur Source.

Published online by Cambridge University Press:  21 February 2011

J.M. Wallace ,
K.A. Prior ,
B.C. Caveneif ,
J.J. Hunter ,
S.J.A. Adams  and
M.J.L.S. Haines
J.M. Wallace
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, UK
K.A. Prior
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, UK
B.C. Caveneif
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, UK
J.J. Hunter
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, UK
S.J.A. Adams
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, UK
M.J.L.S. Haines
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, UK
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Abstract

In this paper we describe the use of an electrochemical sulphur cell to grow ZnSxSe1−x alloys on GaAs substrates. The cell uses the ionic transport of Ag ions in Ag2S to produce a sulphur flux which depends on the applied voltage. The advantages and disadvantages of this type of source will be discussed. We also describe the versatility of the cell for fabricating ZnSxSe1−x/ZnSySe1−y multilayers as well as more complex profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 153
Copyright
Copyright © Materials Research Society 1990

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References

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