Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-19T07:18:55.682Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of ZnSxSe1−x by Mbe Using An Electrochemical Sulphur Source.

Published online by Cambridge University Press:  21 February 2011

J.M. Wallace ,
K.A. Prior ,
B.C. Caveneif ,
J.J. Hunter ,
S.J.A. Adams  and
M.J.L.S. Haines
J.M. Wallace
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, UK
K.A. Prior
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, UK
B.C. Caveneif
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, UK
J.J. Hunter
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, UK
S.J.A. Adams
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, UK
M.J.L.S. Haines
Affiliation:
Department of Physics, Heriot-Watt University, Edinburgh EH14 4AS, UK
Get access

Abstract

In this paper we describe the use of an electrochemical sulphur cell to grow ZnSxSe1−x alloys on GaAs substrates. The cell uses the ionic transport of Ag ions in Ag2S to produce a sulphur flux which depends on the applied voltage. The advantages and disadvantages of this type of source will be discussed. We also describe the versatility of the cell for fabricating ZnSxSe1−x/ZnSySe1−y multilayers as well as more complex profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 153
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Yao, T., Japan Annual Reviews in Electronics, Computers and Telecommunications 19, 111 (1986).Google Scholar
2. Gunshor, R.L. and Kolodziejski, L.A., IEEE J. of Quantum Electronics 24, 1744 (1988).Google Scholar
3. Kitagawa, M., Tomomura, Y., Suzuki, A. and Nakajima, S., J. Cryt. Growth 95, 509 (1989).Google Scholar
4. Matsumura, N., Ishikawa, K., Saraie, J. and Yodogawa, Y., J. Cryst. Growth 72, 41 (1985).Google Scholar
5. Cammack, D.A., Dalby, R.J., Cornelissen, H.J. and Khurgin, J., J. Appl. Phys. 62, 3071 (1987).Google Scholar
6. Ando, H., Taike, A., Konagai, M. and Takahashi, K., J. Appl. Phys. 62, 1251 (1987).Google Scholar
7. Rickert, H., in Physics of electrolytes, Vol 2. Thermal and Electrode Processes in Solid State Electrolytes, edited by Hladik, J. (Academic Press, London, 1972), p. 519.Google Scholar
8. Davies, G.J., Andrews, D.A. and Heckingbottom, R., J. Appl. Phys. 52, 7214 (1981).Google Scholar
9. Andrews, D. A., Heckingbottom, R. and Davies, G.J., J. Appl. Phys. 54, 4421 (1983).Google Scholar
10. Kolodziejski, L.A., Gunshor, R.L., Melloch, M.R., Vaziri, M., Choi, C. and Otsuka, N., in Grow of compound semiconductors, SPIE vol. 796, p. 98.Google Scholar
11. Tamargo, M.C., Miguel, J.L. de, Hwang, D.M. and Farrell, H.H., J. Vac. Sci. Technol. B–6, 784 (1988).Google Scholar
12. Matsumura, N., Tsubokura, M. and Saraie, J., J. Crystal Growth 95, 525 (1989).Google Scholar
13. Shahzad, K., Phys. Rev. B 38, 8309 (1988).Google Scholar
14. Shahzad, K., Olego, D.J., Walle, C.G. van der, Phys. Rev. B 38, 1417 (1988).Google Scholar