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Growth of ZnSe and ZnSSe at Low Temperature with Aid of Atomic Hydrogen and Alternate Gas Supply

Published online by Cambridge University Press:  16 February 2011

Jun Gotoh ,
Hajime Shirai ,
Jun-ichi Hanna  and
Isamu Shimizu
Jun Gotoh
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 227, Japan
Hajime Shirai
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 227, Japan
Jun-ichi Hanna
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 227, Japan
Isamu Shimizu
Affiliation:
The Graduate School at Nagatsuta, Tokyo Institute of Technology 4259 Nagatsuta, Midori-ku, Yokohama 227, Japan
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Abstract

High quality ZnSe films were successfully grown on GaAs(100) at low temperatures, 200 °C or lower by Hydrogen Radical-enhanced Chemical Vapor Deposition (HRCVD). Defects were makedly eliminated by the following factors: selection of source materials; avoidance of ion bombardment; and suppression of formation of adducts by alternate gas supply. Strained-layer superlattice (SLS) consisting of ZnSe as the well and ZnS0. 1Se0.9 as the barrier was made by this technique. Emission line attributed to the free exciton was dominantly observed in the SLS.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 257
Copyright
Copyright © Materials Research Society 1991

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References

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