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Growth of ZnO/MgZnO Superlattice on Sapphire

Published online by Cambridge University Press:  10 February 2011

J.F. Muth ,
C.W. Teng ,
A.K. Sharma ,
A. Kvit ,
R.M. Kolbas  and
J. Narayan
J.F. Muth
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
C.W. Teng
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
A.K. Sharma
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
A. Kvit
Affiliation:
Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7916
R.M. Kolbas
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
J. Narayan
Affiliation:
Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

The optical and structural properties of ZnO/MgZnO superlattices were investigated by transmission electron microscope, transmission measurement and photoluminescence. The uncoupled wells ranged in thickness from ∼ 30 Å to 75 Å Modulation of the Mg content was observed in Z-contrast TEM indicating the alloy composition was periodic. The density of stacking faults in the superlattice was extremely high, however the photoluminescence in the narrowest well case was blue shifted, and substantially brighter than comparable bulk layers of ZnO and MgZnO indicating that the emission was enhanced. Excitonic features were observed in the optical absorption spectra and also revealed that diffusion of Mg from the barrier layers into the well was occurring.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 353
Copyright
Copyright © Materials Research Society 2000

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References

1 Pearton, S.J., Zolper, J.C., Shul, R.J., and Ren, F., J. Appl. Phys 86, 1 (1999)Google Scholar
2 Muth, J.F., Kolbas, R.M., Sharms, A.K., Oktyabrsky, S., and Narayan, J. J. Appl. Phys. 85, 7884, (1999)Google Scholar
3 Mathew, J., Tabata, H., Kawai, T., Jpn. J. App. Phys. Part 2 38, L1205 (1999)Google Scholar
4 Teng, C.W., Muth, J.F., Ögür, Ü., Bergmann, M.J., Everitt, H.O., Sharma, A.K., Jin, C., and Narayan, J., Appl. Phys. Lett. 76, 979 (2000)Google Scholar
5 Ohtomo, A., Shiroki, R., Ohkubo, I., Koinuma, H., Kawasaki, M., Appl. Phys. Lett. 75, 4088 (1999)Google Scholar
6 Ohtomo, A., Kawasaki, M., Ohkubo, I., Koinuma, H., Appl. Phys. Lett. 75, 980 (1999)Google Scholar