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Growth of Uniform InGaAs Bulk Crystal by Multi-Component Zone Melting Method

Published online by Cambridge University Press:  10 February 2011

T. Kusunoki ,
K. Nakajima ,
H. Shoji  and
T. Suzuki
T. Kusunoki
Affiliation:
Fujitsu Laboratories Ltd. Mrinosato-Wakamiya 10-1, Atsugi-shi, 243-01, Japan
K. Nakajima
Affiliation:
Fujitsu Laboratories Ltd. Mrinosato-Wakamiya 10-1, Atsugi-shi, 243-01, Japan
H. Shoji
Affiliation:
Fujitsu Laboratories Ltd. Mrinosato-Wakamiya 10-1, Atsugi-shi, 243-01, Japan
T. Suzuki
Affiliation:
Fujitsu Laboratories Ltd. Mrinosato-Wakamiya 10-1, Atsugi-shi, 243-01, Japan
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Abstract

We have developed a Multi-component Zone Melting method to grow a ternary compound crystal which has a uniform composition. A 4.5 mm long InGaAs bulk crystal with a uniform InAs composition of 0.3 has been successfully grown using this method. InGaAlAs/InGaAs strained quantum well lasers were fabricated on an In0. 2Ga0.8As substrate which was grown by this method. A minimum threshold current density of 280 A/cm2 was achieved.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 315
Copyright
Copyright © Materials Research Society 1996

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