Hostname: page-component-7bb8b95d7b-2h6rp Total loading time: 0 Render date: 2024-09-19T09:47:35.480Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of the {101} face of KDP crystals in the presence of dye Chicago Sky Blue

Published online by Cambridge University Press:  14 March 2011

Olga A. Gliko ,
Natalia P. Zaitseva  and
Leonid N. Rashkovich
Olga A. Gliko
Affiliation:
Department of Physics, MoscowState University, Moscow 119899, Russia
Natalia P. Zaitseva
Affiliation:
Lawrence Livermore National Laboratory, Livermore, CA 94550, USA
Leonid N. Rashkovich
Affiliation:
Department of Physics, MoscowState University, Moscow 119899, Russia
Get access

Abstract

In situ interference technique is used for a study of morphology and growth kinetics of a pyramidal face of KDP crystals with dye Chicago Sky Blue. It is shown that the impurity is captured by a crystal when its concentration in the solution exceeds a certain temperature depended value. In the presence of impurity the face loses its stability with increasing of supersaturation. Further increase of supersaturation leads to the restore and subsequent loss of stability. The experimental results are interpreted in the framework of earlier developed model for a crystal growth in the presence of the easily desorbed mobile impurity. The parameters characterizing the adsorption behavior of mobile impurity and its capture have been determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 620: Symposium M – Morphology & Dynamics of Crystal Surfaces in Complex… , 2000 , M9.9.1
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Chernov, A.A., Rashkovich, L.N., J. Crystal Growth, 84, 389 (1987).Google Scholar
2. Rashkovich, L.N., Shekunov, B.Yu., in: Growth of Crystals, Vol.18, Eds. Givargizov, E.I. and Grinberg, S.A. (Plenum, New York, 1990) p.124.Google Scholar
3. Rashkovich, L.N., Kronsky, N.V., J. Crystal Growth, 182, 434 (1997).Google Scholar
4. Fu, Y.-J., Gao, Z.-S., Liu, J.-M., Li, Y.-P., Zeng, H., Jiang, M.-H., J. Crystal Growth, 198/199, 682 (1999).Google Scholar
5. Land, T.A., Martin, T.L., Potapenko, S., Palmor, G.T., DeYoreo, J.J., Nature, 399, 442 (1999).Google Scholar
6. Vries, S.A. de, Goedtkindt, P., Huisman, W.J., Zwanenburg, M.J., Feidenhans'l, R., Bennett, S.L., Smilgies, D.-M., Stierle, A., Yoreo, J.J. De, Enckevort, W.J.P. van, Bennema, P., Vlieg, E., J. Crystal Growth, 205, 202 (1999).Google Scholar
7. Subramony, J.A., Jang, S.-H. and Kahr, B., Ferroelectrics, 191, 293 (1997).Google Scholar
8. Zaitseva, N., Carman, L., Smolsky, I., Torres, R., Yan, M., J. Crystal Growth, 204, 512 (1999).Google Scholar
9. Rashkovich, L.N., Mkrtchan, A.A., Chernov, A.A., Sov.Phys.-Cryst., 30, 219 (1985).Google Scholar
10. Rashkovich, L.N., Moldazhanova, G.T., in: Growth of Crystals, Vol.20, Eds. Givargizov, E.I. and Melnikova, A.M. (Consultants Bureau, New York, 1996) p.69.Google Scholar
11. Yoreo, J.J. De, Land, T.A., Rashkovich, L.N., Onischenko, T.A., Lee, J.D., Monovskii, O.V., Zaitseva, N.P., J. Crystal Growth, 182, 442 (1997).Google Scholar
12. Voronkov, V.V., Rashkovich, L.N., Sov. Phys.-Cryst., 37, 559 (1992).Google Scholar
13. Voronkov, V.V. and Rashkovich, L.N., J. Crystal Growth, 144, 107 (1994).Google Scholar
14. Voronkov, V.V., in: Growth of Crystals, Vol.20, Eds. Givargizov, E.I. and Melnikova, A.M. (Consultants Bureau, New York, 1996) p.59.Google Scholar
15. Rashkovich, L.N., KDP – family Single Crystals (Adam Hilger, Bristol, Philadelphia and New-York, 1991).Google Scholar
16. Cabrera, N., Vermilyea, D.A., in: Growth and Perfections of Crystals, Eds. Doremus, R.H., Roberts, B.W., Turnball, D. (Wiley, New York, 1958) p. 393.Google Scholar