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The Growth of Surface Textured Aluminum Doped ZnO Films for a-Si Solar Cells by RF Magnetron Sputtering At Low Temperature

Published online by Cambridge University Press:  10 February 2011

J. A. Anna Selvan ,
H. Keppner  and
A. Shah
J. A. Anna Selvan
Affiliation:
Institute of Microtechnology, Rue A.L. Breguet, CH -2000, Neuchâtel, Switzerland. tel.:+41–38 23 33 44, fax.:+41–38 23 32 01, [email protected]
H. Keppner
Affiliation:
Institute of Microtechnology, Rue A.L. Breguet, CH -2000, Neuchâtel, Switzerland. tel.:+41–38 23 33 44, fax.:+41–38 23 32 01, [email protected]
A. Shah
Affiliation:
Institute of Microtechnology, Rue A.L. Breguet, CH -2000, Neuchâtel, Switzerland. tel.:+41–38 23 33 44, fax.:+41–38 23 32 01, [email protected]
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Abstract

Transparent Conducting Oxide films are essential for all kind of thin film solar cells. Doped Zinc Oxide (ZnO) in particular has several advantages when compared to other TCOs. It is stable in a hydrogen plasma and it acts as a diffusion barrier with respect to impurities from the substrate. In this work results on textured ZnO films deposited by RF magnetron sputtering are presented. The dependence of the film properties on the RF power, the substrate temperature and the water-vapor partial pressure added to the argon atmosphere has been investigated. We have found that high quality textured aluminum doped ZnO (ZnO:AI) films can be grown at low temperatures (150 °C) using the sputtering technique. Textured surfaces show two types of surface morphology; columnar and granular, depending on the deposition conditions. The ZnO:AI films seem to undergo a structural transition from hexagonal (mostly columnar appearance) to cubic structure (mostly granular appearance).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 497
Copyright
Copyright © Materials Research Society 1996

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References

2. Mauch, I. R.H. and Schock, H.W. 10thEurop. PVSEC, 1991, 88. and references there in.Google Scholar
2. Nakada, Tokio, Ohkubo, Yukinobu and Kunioka, Akio, 21” Photovoltaic specialist conference, vol 2,1991.1389.Google Scholar
3. , Akira Yamada et al,J.Journal of Applied physics, vol.30, No 7A, 1991,1 152–54Google Scholar
4. Igasaki, Yasuhiro and Saito, Hiromi, Journal of Applied Physics, 69 (4), 1991,2190 Google Scholar
5. Nakada, Tokio Ohkubo, Yukinobu and Kunioka, Akio, Jap.J. Appl.Phys.,Vol 30.No. 12A, 1991, pp3344 Google Scholar
6. Radzewski, O.E. and Schicht, R:F., Naturwissenschaften 56,514 (1969)Google Scholar
7. Meier, J., Torres, P., Platz, R., Dubail, S., Kroll, U., Selvan, J.A.Anna, Vaucher, N.Pellaton, Hof, Ch., Fischer, D., Keppner, H., Shah, A., Ufert, K.D., Giannoulès, P. and Koehler, J., MRS spring meeting 1996 Sanfrancisco (this conference)Google Scholar
8. Torres, Peter, Meier, J., Flbckiger, R., Kroll, U.,Anna Selvan, J.A., Keppner, H. and Shah, A. Appl. phys. Lett., to be communicatedGoogle Scholar
9. Nakada, Tokio, Ohkubo, Yukiyasu, Murakami, Naoki and , Kunioka Jap.J.Appl. Phys. Vol.34 (1995) pp 3623 Google Scholar