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Growth of SrS Thin Films by Atomic Layer Epitaxy

Published online by Cambridge University Press:  16 February 2011

M. Leskela ,
L. Niinistö ,
E. Nykänen ,
P. Soininen  and
M. Tiitta
M. Leskela
Affiliation:
Department of Chemistry, University of Helsinki, SF-00100 Helsinki, Finland
L. Niinistö
Affiliation:
Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, SF-02150 Espoo, Finland
E. Nykänen
Affiliation:
Department of Chemistry, University of Helsinki, SF-00100 Helsinki, Finland
P. Soininen
Affiliation:
Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, SF-02150 Espoo, Finland
M. Tiitta
Affiliation:
Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, SF-02150 Espoo, Finland
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Abstract

The growth of strontium sulfide thin films in a flow-type Atomic Layer Epitaxy reactor from Sr(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and H2S has been studied. The growth is independent on flow rate and duration of the purge gas (N2) pulse and it does not depend on the Sr(thd)2 and H2S pulses either provided their amounts are sufficient to saturate the surface. The variables significantly affecting the growth rate are the substrate temperature and source temperature for Sr(thd)2. The observed lower than one monolayer growth rate is mainly due to the large size of the Sr(thd)2 molecule.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 315
Copyright
Copyright © Materials Research Society 1991

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References

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