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Growth of Silicon-Doped and High Quality, Highly Resistive GaN for FET Applications

Published online by Cambridge University Press:  21 February 2011

K. Doverspike ,
A.E. Wickenden ,
S.C. Binari ,
D.K. Gaskill  and
J.A. Freitas
K. Doverspike
Affiliation:
Naval Research Laboratory, Washington DC 20375-5347
A.E. Wickenden
Affiliation:
Sachs/Freeman Associates Inc, Landover, MD 20785-5396
S.C. Binari
Affiliation:
Sachs/Freeman Associates Inc, Landover, MD 20785-5396
D.K. Gaskill
Affiliation:
Sachs/Freeman Associates Inc, Landover, MD 20785-5396
J.A. Freitas
Affiliation:
currently at Hewlett Packard, San Jose, CA 95131
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Abstract

We have shown the ability to grow thin, high mobility, GaN channel layers on high quality, highly resistive GaN. The growth, characteristics, and device results of two types of MESFET structures were discussed. The first device structure consists of a 2000Ǻ, 2 × 1017cm−3 Si-doped channel layer, grown on 3µm of highly resistive GaN, while die second structure (recessed-gate MESFET) had a 1000Ǻ, 1 × 1018cm−3 Si-doped, n+ capping layer deposited on a 2000Ǻ, 2 × 1017cm−3 Si-doped channel layer. The first MESFET structure was operational at 500°C which is the highest reported operating temperature for a GaN device while the recessed-gate MESFET had a gmas high as 41mS/mm, which is the highest reported value for a GaN MESFET.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 897
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Morkoc, H., Strite, S., Gao, G.B., Lin, M.E., Sverdlov, B., and Burns, M., J.Appl. Phys. 76,1363 (1994).Google Scholar
2 Hiramatsu, K., Itoh, S., Amano, H., Akasaki, I., Kuwano, N., Shiraishi, T., and Oki, K., J. Crystal Growth, 115, 628 (1991).Google Scholar
3 Doverspike, K., Rowland, L.B., Gaskill, D.K., and Freitas, J.A. Jr., J.Elect. Mat., 23 (12), 269 (1995).Google Scholar
4 Rowland, L.B., Doverspike, K., and Gaskill, D.K., Appl. Phys. Lett., 66 (12),1495 (1995).Google Scholar
5 Binari, S.C., Electrochemical Society Proceedings, Vol. 95–21, pp. 136 (1994).Google Scholar
6 . Rowland, L.B., Doverspike, K., Gaskill, D.K., and Freitas, J.A. Jr., Mater. Res.Soc. Proc, 339, 477,1994.Google Scholar
7 Glaser, E.R., Kennedy, T.A., Crookham, H.C. Jr., Freitas, J.A., , Khan, M.A., Olson, D.T., and Kuznia, J.N., Appl. Phys.Lett., 63,2673 (1993).Google Scholar
8 Wickenden, A.E., Rowland, L.B., Doverspike, K., Gaskill, D.K., Freitas, J.A. Jr., Simons, D.S., and Chi, P.H., submitted to Elect. Mat. Google Scholar