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Growth of Silicon Films Onto Fluororesin Surface by ArF Excimer Laser

Published online by Cambridge University Press:  22 February 2011

T. Miyokawa ,
M. Okoshi ,
K. Toyoda  and
M. Murahara
T. Miyokawa
Affiliation:
Graduate Student of Tokai University
M. Okoshi
Affiliation:
Graduate Student of Tokai University
K. Toyoda
Affiliation:
The Institute of Physical and Chemical Research (IPCR), 2–1 Hirosawa, Wako, Saitama 351–01, JAPAN
M. Murahara
Affiliation:
Faculty Engineering of Tokai University, 1117 Kitakaname, Hiratsuka, Kanagawa 259–12, JAPAN
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Abstract

Silicon films were deposited on a fluororesin surface. The process was divided into two steps: surface modification process and silicon CVD onto the modified parts. In the modification process, SiH4 and B(CH3)3 mixed gases were used with ArF excimer laser. Fluorine atoms of the surface were pulled out by boron atoms which were photo—dissociated from B(CH3)3 and were replaced with silicon atoms released from SiH4. In the CVD process, SiH4 gas was used with high—density excited ArF excimer laser. Silicon films were deposited onto the nuclei by photodecomposition of SiH4.

Chemical compositions of the modified layers and the deposited parts were inspected by XPS analysis. 1000 Å thickness of the deposited silicon films was confirmed by the surface roughness interference–meter.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 87
Copyright
Copyright © Materials Research Society 1994

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References

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