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Growth of Oriented Gallium Nitride Films on Amorphous Substrates by Self Assembly

Published online by Cambridge University Press:  11 February 2011

Hongwei Li  and
Mahendra K. Sunkara
Hongwei Li
Affiliation:
Department of Chemical Engineering, University of Louisville, Louisville, KY 40292, U.S.A.
Mahendra K. Sunkara
Affiliation:
Department of Chemical Engineering, University of Louisville, Louisville, KY 40292, U.S.A.
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Abstract

C-plane oriented thin films of gallium nitride (GaN) were grown on both amorphous quartz substrates and single crystalline c-sapphire substrates at sub-atmospheric pressures by exposing molten gallium thin films to electron cyclotron resonance (ECR) microwave generated nitrogen plasma. Gallium nitride crystals nucleated from molten gallium and self-aligned with respect to each other due to the mobility of nitrogenated gallium and formed textured film directly on amorphous substrates. Scanning electron microscopy (SEM) images and X-ray Diffraction (XRD) spectra confirmed the orientation among crystals. Micro-Raman spectra exhibited a FWHM of 3 cm−1. Self-assembled, nanocrystalline GaN thin films were obtained when spin-coated gallium thin films (< 1 μm) on quartz substrates were nitrided.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 743: Symposium L – GaN and Related Alloys , 2002 , L3.11
Copyright
Copyright © Materials Research Society 2003

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