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Growth of non-polar a-plane and cubic InN on r-plane sapphire by molecular beam epitaxy

Published online by Cambridge University Press:  01 February 2011

Hai Lu ,
William J. Schaff ,
Lester F. Eastman ,
Volker Cimalla ,
Joerg Pezoldt ,
Oliver Ambacher ,
J. Wu  and
Wladek Walukiewicz
Hai Lu
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853
William J. Schaff
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853
Lester F. Eastman
Affiliation:
Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853
Volker Cimalla
Affiliation:
Center for Micro- and Nanotechnologies, Technical University Ilmenau, PF100565, 98693 Ilmenau, Germany
Joerg Pezoldt
Affiliation:
Center for Micro- and Nanotechnologies, Technical University Ilmenau, PF100565, 98693 Ilmenau, Germany
Oliver Ambacher
Affiliation:
Center for Micro- and Nanotechnologies, Technical University Ilmenau, PF100565, 98693 Ilmenau, Germany
J. Wu
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Wladek Walukiewicz
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
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Abstract

Growth of non-polar III-nitrides has been an important subject recently due to its potential improvement on the efficiency of III-nitride-based opto-electronic devices. Despite study of non-polar GaN and GaN-based heterostructures, there are few reports on epitaxial growth of non-polar InN, which is also an important component of the III-nitride system. In this study, we report heteroepitaxial growth of non-polar InN on r-plane sapphire substrates using plasma-assisted molecular beam epitaxy. It is found that when a GaN buffer is used, the following InN film appears to be non-polar (1120) a-plane which follows the a-plane GaN buffer. The room temperature Hall mobility of undoped a-plane InN is around 250 cm2/Vs with a carrier concentration around 6×1018 cm-3. Meanwhile, if InN film is directly deposited on r-plane sapphire without any buffer, the InN layer is found to consist of a predominant zincblende (cubic) structure along with a fraction of the wurtzite (hexagonal) phase with increasing content with proceeding growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y12.6
Copyright
Copyright © Materials Research Society 2004

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References

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