Hostname: page-component-cd9895bd7-jkksz Total loading time: 0 Render date: 2024-12-27T19:04:58.287Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Metal Alkoxide Solution Derived Epitaxial LiNbO3 Thin Films for Optical Waveguides

Published online by Cambridge University Press:  10 February 2011

Keiichi Nashimoto ,
Shigetoshi Nakamura  and
Hiroaki Moriyama
Keiichi Nashimoto
Affiliation:
Optical Devices Laboratory, Fuji Xerox Co., Ltd. 1600 Takematsu, Minamiashigara, Kanagawa 250–01, Japan
Shigetoshi Nakamura
Affiliation:
Optical Devices Laboratory, Fuji Xerox Co., Ltd. 1600 Takematsu, Minamiashigara, Kanagawa 250–01, Japan
Hiroaki Moriyama
Affiliation:
Optical Devices Laboratory, Fuji Xerox Co., Ltd. 1600 Takematsu, Minamiashigara, Kanagawa 250–01, Japan
Get access

Abstract

Solid phase epitaxial growth of LiNbO3 thin films, using a methoxyethoxide solution process, has been examined for optical waveguide applications. The growth variables such as crystallization temperature, crystallization time, and film thickness have been found to be critical factors in the quality of LiNbO3 thin films. High quality epitaxial LiNbO3 films were grown on sapphire (001) substrates using optimized buffer layers. The LiNbO3 showed single orientation, rocking curve full width at half maximum less than 0.04°, and rms roughness of 2.3 nm, in addition to refractive index of 2.24 and optical propagation loss of 3.0 dB/cm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996 , 395
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Schwyn, S., Lehmann, H. W., and Widmer, R., J. Appl. Phys. 72, 1154 (1992).Google Scholar
2. Agostinelli, J. A., Braunstein, G. H., Blanton, T. N., Appl. Phys. Lett. 63, 123 (1993).Google Scholar
3. Lu, Z., Hiskers, R., DiCarolis, S. A., Route, R. K., Feigelson, R. S., Leplingard, F., Fouquet, J. E., J. Mater. Res. 9, 2258 (1994).Google Scholar
4. Nashimoto, K. and Cima, M. J., Mater. Lett. 10, 348 (1991).Google Scholar
5. Nashimoto, K., Cima, M. J., and Rhine, W. E., Ceram. Trans. 25, 371 (1992).Google Scholar
6. Nashimoto, K., in Ferroelectric Thin Films III, edited by Myers, E. R., Tuttle, B. A., Desu, S. B., and Larsen, P. K. (Mater. Res. Soc. Proc. 310, Pittsburgh, PA, 1993) pp. 293–298.Google Scholar
7. Clem, P. G. and Payne, D. A., in Ferroelectric Thin Films IV, edited by Tuttle, B. A., Desu, S. B., Ramesh, R., and Shiosaki, T. (Mater. Res. Soc. Proc. 361, Pittsburgh, PA, 1995) pp. 179–184.Google Scholar
8. Nashimoto, K., Nakamura, S., and Moriyama, H., Jpn. J. Appl. Phys. 34, 5091 (1995).Google Scholar