Hostname: page-component-745bb68f8f-grxwn Total loading time: 0 Render date: 2025-02-10T08:28:29.207Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Large Diameter Semi-Insulating 6H-SiC Crystals by Physical Vapor Transport

Published online by Cambridge University Press:  15 March 2011

M. Yoganathan ,
A. Gupta ,
E. Semenas ,
E. Emorhokpor ,
C. Martin ,
T. Kerr ,
I Zwieback ,
A. E. Souzis ,
T.A. Anderson  and
C.D. Tanner
...Show all authors
M. Yoganathan
Affiliation:
II-VI, Inc., 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058
A. Gupta
Affiliation:
II-VI, Inc., 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058
E. Semenas
Affiliation:
II-VI, Inc., 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058
E. Emorhokpor
Affiliation:
II-VI, Inc., 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058
C. Martin
Affiliation:
II-VI, Inc., 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058
T. Kerr
Affiliation:
II-VI, Inc., 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058
I Zwieback
Affiliation:
II-VI, Inc., 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058
A. E. Souzis
Affiliation:
II-VI, Inc., 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058
T.A. Anderson
Affiliation:
II-VI, Inc., 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058
C.D. Tanner
Affiliation:
II-VI, Inc., 375 Saxonburg Blvd., Saxonburg, PA 16056
J. Chen
Affiliation:
II-VI, Inc., 375 Saxonburg Blvd., Saxonburg, PA 16056
D.L. Barrett
Affiliation:
II-VI, Inc., 20 Chapin Rd, Suite 1005, Pine Brook, NJ 07058 II-VI, Inc., 375 Saxonburg Blvd., Saxonburg, PA 16056
R.H. Hopkins
Affiliation:
II-VI, Inc., 375 Saxonburg Blvd., Saxonburg, PA 16056
C.J. Johnson
Affiliation:
II-VI, Inc., 375 Saxonburg Blvd., Saxonburg, PA 16056
Fei Yan
Affiliation:
University of Pittsburgh, Department of Physics and Astronomy, Pittsburgh, PA 15260
W.J. Choyke
Affiliation:
University of Pittsburgh, Department of Physics and Astronomy, Pittsburgh, PA 15260
R.P. Devaty
Affiliation:
University of Pittsburgh, Department of Physics and Astronomy, Pittsburgh, PA 15260
Get access

Abstract

Semi-insulating (SI) 6H-SiC boules up to 110mm in diameter have been grown by Physical Vapor Transport (PVT). SI properties have been achieved by vanadiumc compensation, which resulted in the room temperature electrical resistivity exceeding 2×1011ωcm. Low temperature photoluminescence (LTPL) data shows the presence of the deep intrinsic defect level UD-1 in addition to V4+. The nitrogen-bound exciton (NBE) luminescence is weak in heavily vanadium compensated 6H-SiC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J5.9
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Tairov, Yu. M. and Tsvetkov, V. F., J. Crystal Growth 43, 208 (1978).Google Scholar
2. Barrett, Donovan L., Hobgood, Hudson M., McHugh, James P., and Hopkins, Richard H., U.S. Patent No. 5,611,955 (18 March 1997).Google Scholar
3. Hobgood, H. M., Glass, R. C., Augustine, G., Hopkins, R. H., Jenny, J., Skowronski, M., Mitchell, W. C. and Roth, M., Appl. Phys. Lett. 66, 1364 (1995).Google Scholar
4. Sanchez, Edward K., Kuhr, Thomas, Heydemann, Volker D., Snyder, David W., Rohrer, Gregory S., and Skowronski, Marek, J. Electron. Mater. 29(3), 347 (2000).Google Scholar
5. Faust, J. W. Jr., in Silicon Carbide (Pergamon, New York, 1960) p. 403.Google Scholar
6. Bickermann, M., Weingärtner, R., and Winnacker, A., Journal of Crystal Growth 254, 390 (2003).Google Scholar
7. Evwaraye, A. O., Smith, S. R. and Mitchel, W. C., J. Appl. Phys. 79 (1), 253 (1996).Google Scholar
8. Choyke, W. J., in The Physics and Chemistry of Carbides, Nitrides, and Borides-NATO ASI Series E: Applied Sciences 185, edited by Freer, R. (Kluwer, Dordrecht, 1990) p. 863.Google Scholar
9. Devaty, R. P. and Choyke, W. J., Phys. Stat. Sol. A, 162 (1997) p.5.Google Scholar
10. Schneider, J., Müller, H. D., Maier, K., Wilkening, W., and Fuchs, F., Dörnen, A., Leibenzeder, S. and Stein, R., Appl. Phys. Lett. 56 (12), 1184–1186 (1990).Google Scholar
11. Janzén, E., Henry, A., Bergman, J.P., Ellison, A. and Magnusson, B., Mater. Sci. Semicond. Proc. 4, 181 (2001).Google Scholar
12. Clemen, L. L., Yoganathan, M., Choyke, W. J., Devaty, R. P., Kong, H. S., Edmond, J. A., Larkin, D. J., Powell, J. A. and Burk, A. A. Jr., (Inst. Phys. Conf. Series 137, 5th SiC and Related Materials Conference, Washington D.C. (1993)) p.251.Google Scholar