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Growth of InSb/GaAs Layers on YIG-Coated GGG Substrate

Published online by Cambridge University Press:  25 February 2011

C. Jelen ,
S. Charrière ,
M. Razeghi  and
V. J. Leppert
C. Jelen
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston, Illinois 60208
S. Charrière
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston, Illinois 60208
M. Razeghi
Affiliation:
Center for Quantum Devices, Department of Electrical Engineering and Computer Science Northwestern University, Evanston, Illinois 60208
V. J. Leppert
Affiliation:
Material Science Department, Northwestern University, Evanston, Illinois 60208
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Abstract

We report the first growth of InSb and GaAs epilayers upon a garnet (YIG = Y3Fe5O12) epilayer. The YIG was deposited using liquid phase epitaxy on a garnet (GGG = Gd3Ga5O12) substrate oriented in the [111] direction. The growth of the GaAs was carried out using laser ablation and no superlattice was used to buffer the lattice mismatch between YIG and GaAs. The growth of InSb was done by low-pressure metalorganic chemical vapor deposition. From x-ray diffraction analysis it was found that the GaAs and InSb were both (110) monocrystalline epitaxial layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 281: Symposium D – Semiconductor Heterostructures for Photonic and Electronic Applications , 1992 , 381
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Ishak, W.S., Proc. IEEE 76, 188 (1988).Google Scholar
2. Dobbelaere, W., De Boeck, J., Heremans, P., Mertens, R., Borghs, G., Luyten, W., Van Landuyt, J.: Appl. Phys. Lett. 60, 3256 (1992).Google Scholar
3. Kurtz, S.R., Dawson, L.R., Zipperian, T.E., and Whaley, R.D., IEEE Electron Device Lett. 11, 54 (1990).Google Scholar
4. Ma, K.Y., Fang, Z. M., Cohen, R.M., and Stringfellow, G.B., J. Appl. Phys. 68, 4586 (1990).Google Scholar
5. Razeghi, M., Meunier, P-L., and Maurel, P.: J. Appl. Phys. 59, 2261 (1986).Google Scholar
6. Haisma, J., Cox, A.M.W., Koek, B.H., Mateika, D., Pistorius, J.A. and Smeets, E.T.J.M., J. Cryst. Growth 87, 180 (1988).Google Scholar
7. Haisma, J., Koek, B.H., Maes, J.W.F., Mateika, D., Pistorius, J.A. and Roksnoer, P.J., J. Cryst. Growth 83, 466 (1987).Google Scholar
8. Choi, Y.H., Sudharsanan, R., and Razeghi, M., submitted to Appl. Phys. Lett. (1992).Google Scholar
9. Klages, C.-P. and Tolksdorf, W., J. Cryst. Growth 64, 275 (1983).Google Scholar
10. Van Duyne, R.P., Leppert, V.J., Xiong, F. and Chang, R.P.H., submitted to J. Chem. Phys. (1992).Google Scholar