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Growth of InSb on GaAs Substrates Using InAlSb Buffers for Magnetic Field Sensor Applications

Published online by Cambridge University Press:  10 February 2011

R. M. Biefeld  and
J. D. Phillips
R. M. Biefeld
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0601
J. D. Phillips
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185-0601
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Abstract

We report the growth of InSb on GaAs using InAISb buffers of high interest for magnetic field sensors. We have grown samples by metal-organic chemical vapor deposition consisting of ∼0.55µm thick InSb layers with resistive InAlSb buffers on GaAs substrates with measured electron mobilities of ∼40,000 cm2/V.s. We have investigated the In1−xAlxSb buffers for compositions x≤0.22 and have found that the best results are obtained near x=0.12 due to the tradeoff of buffer layer bandgap and lattice mismatch.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 59
Copyright
Copyright © Materials Research Society 2000

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