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The Growth of InAsSb/InGaAs Strained-Layer Superlattices by Metal-Organic Chemical Vapor Deposition

Published online by Cambridge University Press:  22 February 2011

R. M. Biefeld ,
K. C. Baucom ,
S. R. Kurtz  and
D. M. Follstaedt
R. M. Biefeld
Affiliation:
Sandia National Laboratory, Albuquerque, NM
K. C. Baucom
Affiliation:
Sandia National Laboratory, Albuquerque, NM
S. R. Kurtz
Affiliation:
Sandia National Laboratory, Albuquerque, NM
D. M. Follstaedt
Affiliation:
Sandia National Laboratory, Albuquerque, NM
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Abstract

We have grown InAsl-xSbx/Inl-yGayAs strained-layer superlattice (SLS) semiconductors lattice matched to InAs using a variety of conditions by metal-organic chemical vapor deposition. The V/III ratio was varied from 2.5 to 10 at a temperature of 475 °C, at pressures of 200 to 660 torr and growth rates of 3 - 5 A/s and layer thicknesses ranging from 55 to 152 Å. The composition of the InAsSb ternary can be predicted from the input gas molar flow rates using a thermodynamic model. At lower temperatures, the thermodynamic model must be modified to take account of the incomplete decomposition of arsine and trimethylantimony. Diodes have been prepared using Zn as the p-type dopant and undoped SLS as the n-type material. The diode was found to emit at 3.56 μm. These layers have been characterized by optical microscopy, SIMS, x-ray diffraction, and transmission electron diffraction. The optical properties of these SLS's were determined by infrared photoluminescence and absorption measurements.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 493
Copyright
Copyright © Materials Research Society 1994

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