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Growth of Iii-Nitrides by Rf-Assisted Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

E. C. Piquette ,
P. M. Bridger ,
Z. Z. Bandić  and
T. C. Mcgill
E. C. Piquette
Affiliation:
Watson Laboratories of Applied Physics 128-95 California Institute Of Technology, Pasadena, California 91125
P. M. Bridger
Affiliation:
Watson Laboratories of Applied Physics 128-95 California Institute Of Technology, Pasadena, California 91125
Z. Z. Bandić
Affiliation:
Watson Laboratories of Applied Physics 128-95 California Institute Of Technology, Pasadena, California 91125
T. C. Mcgill
Affiliation:
Watson Laboratories of Applied Physics 128-95 California Institute Of Technology, Pasadena, California 91125
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Abstract

GaN, AlGaN, AIN were grown on (0001) A1203 substrates by MBE using a RF plasma source and employing an AIN buffer layer. The films were characterized by RHEED, AFM, and x-ray diffraction, and electrical properties were measured by Hall technique. RHEED observations indicate that the polarity of the films is likely predominantly N-face, although Ga-face inversion domains can be observed in some films by AFM. Symmetric x-ray rocking curve widths as low as 39 arcseconds are achieved for some layers, while asymmetric peaks show widths of 240–300 arcsec. Control of Si doping over a wide range is demonstrated, which is important for design of high power device structures. Gold Schottky barrier m-v-n+diodes were fabricated which achieve high reverse electric fields before edge breakdown.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 387
Copyright
Copyright © Materials Research Society 1998

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References

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