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Growth of Hydrogenated Amorphous Silicon (A-Si:H) on Patterned Substrates for Increased Mechanical Stability

Published online by Cambridge University Press:  21 February 2011

Wan-Shick Hong ,
J. C. Delgado ,
O. Ruiz  and
V. Perez-Mendez
Wan-Shick Hong
Affiliation:
Physics Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, U.S.A.
J. C. Delgado
Affiliation:
Dept. de Física Aplicada i Electrònica, Universitat de Barcelona, Barcelona, Spain
O. Ruiz
Affiliation:
Dept. de Física Aplicada i Electrònica, Universitat de Barcelona, Barcelona, Spain
V. Perez-Mendez
Affiliation:
Physics Division, Lawrence Berkeley Laboratory, Berkeley, CA 94720, U.S.A.
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Abstract

Residual stress in hydrogenated amorphous silicon (a-Si:H) film has been studied. Deposition on square island pattern reduced the stress when the lateral dimension of the islands became comparable to the film thickness. The overall stress was reduced by approximately 40% when the lateral dimension was decreased to 40 μm, but the adhesion was not improved much. However, substrates having a 2-dimensional array of inversed pyramids of 200 μm in lateral dimension produced overall stress 3∼4 times lower than that on the normal substrates. The inversed pyramid structure also had other advantages including minimized delamination and increased effective thickness. Computer simulation confirmed that the overall stress can be reduced by deposition on the pyramidal structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 356: Symposium B2 – Thin Films: Stresses and Mechanical Properties V , 1994 , 209
Copyright
Copyright © Materials Research Society 1995

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