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Growth of Highly (112) Oriented Cu2ZnSnS4 Thin Film on Sapphire Substrate by Radio Frequency Magnetron Sputtering

Published online by Cambridge University Press:  06 May 2014

Ning Song ,
Xiaojing Hao ,
Binesh Puthen-Veettil ,
Shujuan Huang  and
Martin A Green
Ning Song
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
Xiaojing Hao
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
Binesh Puthen-Veettil
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
Shujuan Huang
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
Martin A Green
Affiliation:
School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, NSW, 2052, Australia
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Abstract

For structural investigation, highly (112) oriented tetragonal Cu2ZnSnS4 (CZTS) thin films on hexagonal sapphire (0001) single crystal substrates were obtained by radio frequency (RF) magnetron sputtering. The influences of the deposition parameters, such as substrate temperature (Tsub) and working Ar pressure (PAr) on the chemical composition and structural properties of as deposited CZTS films were investigated. The film sputtered at 500°C has the only orientation of (112), also, it bears the best structural quality with pure CZTS phase and an estimated band gap of 1.51eV.

Keywords

photovoltaicthin filmsputtering
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1640: Symposium Z – Sustainable Solar-Energy Conversion Using Earth-Abundant Materials , 2014 , mrsf13-1640-z10-53
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Katagiri, H., Jimbo, K., Maw, W. S., Oishi, K., Yamazaki, M., Araki, H. and Takeuchi, A., Thin Solid Films 517 (7), 2455–2460 (2009).CrossRefGoogle Scholar
Shockley, W. and Queisser, H. J., Journal of applied physics 32 (3), 510–519 (1961).CrossRefGoogle Scholar
Green, M. A., Emery, K., Hishikawa, Y., Warta, W. and Dunlop, E. D., Progress in Photovoltaics: Research and Applications 22 (1), 1–9 (2014).CrossRefGoogle Scholar
Sekiguchi, K., Tanaka, K., Moriya, K. and Uchiki, H., physica status solidi (c) 3 (8), 2618–2621 (2006).CrossRefGoogle Scholar
Oishi, K., Saito, G., Ebina, K., Nagahashi, M., Jimbo, K., Maw, W. S., Katagiri, H., Yamazaki, M., Araki, H. and Takeuchi, A., Thin Solid Films 517 (4), 1449–1452 (2008).CrossRefGoogle Scholar
Frantz, J., Bekele, R., Nguyen, V., Sanghera, J., Bruce, A., Frolov, S., Cyrus, M. and Aggarwal, I., Thin Solid Films 519 (22), 7763–7765 (2011).CrossRefGoogle Scholar
Just, J., Lützenkirchen-Hecht, D., Frahm, R., Schorr, S. and Unold, T., Applied physics letters 99 (26), 262105 (2011).CrossRefGoogle Scholar
Song, N., Wang, Y., Hu, Y., Huang, Y., Li, W., Huang, S. and Hao, X., Applied physics letters 104 (9), 092103 (2014).CrossRefGoogle Scholar