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The Growth of High Quality GaAs Epilayers on Stripe Patterned InP Substrates With a Transferred GaAs Fused Layer

Published online by Cambridge University Press:  10 February 2011

Sung Min Hwang ,
Young Ju Park ,
Eun Kyu Kim  and
In-Hoon Choi
Sung Min Hwang
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea
Young Ju Park
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea
Eun Kyu Kim
Affiliation:
Semiconductor Materials Laboratory, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul 130-650, Korea
In-Hoon Choi
Affiliation:
Department of materials science, Korea University, I Anam-Dong, Sungbuk-Ku, Seoul 132-701, Korea
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Abstract

Both the wafer fusion and the heteroepitaxy technology were used successfully to obtain high quality GaAs layer on the InP substrate where the lattice mismatch was 3.7 %. The enhancement of the lateral growth rate was a crucial factor for the formation of high quality QWR in the patterned fusion layer. This technique can provide a way of overcoming the limitation of heteroepitaxy caused by misfit problems and its subsequent quality degradation. It is expected that the overgrowth technique on the patterned fusion layer can be applicable to the photonic device fabrication on the other substrate such as Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 71
Copyright
Copyright © Materials Research Society 2000

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References

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