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Growth of High Al Concentration AlGaN for Solar Blind Photodetector Applications

Published online by Cambridge University Press:  21 March 2011

Shiping Guo ,
Milan Pophristic ,
Ian Ferguson ,
Boris Peres ,
Phil Lamarre ,
Steve Tobin ,
Kwok Wong ,
Marion Reine  and
Ashok Sood
Shiping Guo*
Affiliation:
EMCORE Corporation, 145 Belmont Drive, Somerset, NJ 08873, U.S.A.
Milan Pophristic
Affiliation:
EMCORE Corporation, 145 Belmont Drive, Somerset, NJ 08873, U.S.A.
Ian Ferguson
Affiliation:
EMCORE Corporation, 145 Belmont Drive, Somerset, NJ 08873, U.S.A. Georgia Institute of Technology, School of Electrical and Computer Engineering Atlanta, GA 30332, U.S.A.
Boris Peres
Affiliation:
EMCORE Corporation, 145 Belmont Drive, Somerset, NJ 08873, U.S.A.
Phil Lamarre
Affiliation:
BAE SYSTEMS, Lexington, MA 02421, and Nashua, NH 03060, U.S.A.
Steve Tobin
Affiliation:
BAE SYSTEMS, Lexington, MA 02421, and Nashua, NH 03060, U.S.A.
Kwok Wong
Affiliation:
BAE SYSTEMS, Lexington, MA 02421, and Nashua, NH 03060, U.S.A.
Marion Reine
Affiliation:
BAE SYSTEMS, Lexington, MA 02421, and Nashua, NH 03060, U.S.A.
Ashok Sood
Affiliation:
BAE SYSTEMS, Lexington, MA 02421, and Nashua, NH 03060, U.S.A.
*
*corresponding author: [email protected]
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Abstract

The development of a metalorganic chemical vapor deposition growth process for AlxGa1-xN materials with high aluminum composition (x∼0.40-0.60) on sapphire substrates is reported. Room temperature Hall measurements of Si-doped AlGaN epilayers with x∼0.40 show a narrow window for efficient doping with a carrier concentration of ∼1.5x1018 cm-3 and a mobility of ∼35 cm2/V-s obtained under optimum growth conditions. AlxGa1-xN-based solar-blind p-i-n device structures were grown and diode I-V curves were obtained with a high R0A of <2.9×1010 ohm-cm2. Secondary ion mass spectroscopy measurements show a sharp transition between regions of high concentration of Mg (2×1020 cm-3) and Si (1×1019 cm-3) in p-GaN and n-AlGaN layers, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 693 , 2001 , I11.18.1
Copyright
Copyright © Materials Research Society 2002

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