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Growth of GeSi/Si Strained-layer Superlattices Using Limited Reaction Processing

Published online by Cambridge University Press:  28 February 2011

C. M. Gronet ,
C. A. King  and
J. F. Gibbons
C. M. Gronet
Affiliation:
Stanford Electronics Labs, McCullough 226, Stanford, CA 94305
C. A. King
Affiliation:
Stanford Electronics Labs, McCullough 226, Stanford, CA 94305
J. F. Gibbons
Affiliation:
Stanford Electronics Labs, McCullough 226, Stanford, CA 94305
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Abstract

SiGe/Si superlattices were grown using limited reaction processing in a chamber which allows both W-halogen and Hg arc wafer illumination. Each multilayer structure was fabricated in-situ by changing the gas composition between high temperature cycles. Commensurate SiGe alloy layers as thin as 15 nm were reproducibly deposited and were examined using transmission electron microscopy, sputtering Auger electron spectroscopy,and Rutherford backscattering. Preliminary results are presented on UV/ozone cleaning of LRP substrates to remove residual carbon contamination in-situ prior to film deposition.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 71: Symposium F – Materials Issues in Silicon Integrated Circuit Processing , 1986 , 107
Copyright
Copyright © Materials Research Society 1986

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References

1. Gibbons, J. F., Gronet, C. M., and Williams, K. E., Appl. Phys. Lett. 47, 721 (1985).CrossRefGoogle Scholar
2. Gronet, C. M., Sturm, J. C., Williams, K. E., and Gibbons, J. F., MRS Symposium on Rapid Thermal Processing, Boston, MA, Dec. 1985 (Materials Research Society, Pittsburgh, PA 1986), Vol. 52, p. 305.Google Scholar
3. Gronet, C. M., Sturm, J. C., Williams, K. E., Gibbons, J. F., and Wilson, S. D., Appl. Phys. Lett. 48, 1012 (1986).CrossRefGoogle Scholar
4. Sturm, J. C., Gronet, C. M., and Gibbons, J. F., IEEE Electron Device Lett., EDL–7, 282 (1986).CrossRefGoogle Scholar
5. Bean, J. C. in Silicon Molecular Beam Epitaxy, edited by Bean, J. C. (The Electrochem. Soc., Pennington, NJ, 1985) Vol. 85–7, p. 337.Google Scholar
6. Bean, J. C., Sheng, T. T., Feldman, L. C., Fiory, A. T., and Lynch, R. T., Appl. Phys. Lett 44, 102 (1984).CrossRefGoogle Scholar
7. Jorke, H. and Herzog, H.-J. in Silicon Molecular Beam Epitaxy, edited by Bean, J. C. (The Electrochem. Soc., Pennington, NJ, 1985) Vol. 85–7, p. 352.Google Scholar
8. Manasevit, H. M., Gergis, I. S., and Jones, A. B., Appl. Phys. Lett. 41, 464 (1982).CrossRefGoogle Scholar
9. Pearsall, T. P. and Bean, John C., IEEE Electron Device Lett., EDL–7, 308 (1986).CrossRefGoogle Scholar
10. Daembkes, H., Herzog, H.-J., Jorke, H., Kibbel, H., and Kaspar, E., IEEE Trans. on Electron Dev., Ed–33, 633 (1986).CrossRefGoogle Scholar
11. Pearsall, T. P., Temkin, H., Bean, J. C., and Luryi, S., IEEE Electron Device Lett., EDL–7, 330 (1986).CrossRefGoogle Scholar
12. Tabe, M., Appl. Phys. Lett., 45,1073 (1984).CrossRefGoogle Scholar
13. Vig, J. R. and Bus, J. W. Le, IEEE Trans. on Parts, Hybrids, and Packaging, Php–12, 365 (1976)CrossRefGoogle Scholar
14. Norstrom, N., Ostling, M., Buchta, R., and Petersson, C. S., J. Electronchem. Soc., 132, 2287 (1985).CrossRefGoogle Scholar
15. Abelson, J. R., Mercer, D., and Helms, C. R., Stanford University (to be published).Google Scholar
16. Ishitani, A. and Itoh, S., MRS Symposium on Beam-Induced Chemical Processes, Boston, MA, Dec. 1985 (Materials Research Society, Pittsburgh, PA 1986), extended abstracts, p. 51.Google Scholar
17. Tatsumi, T., Aizaki, N., and Tsuya, H., Jap. J. Appl. Phys., 24, L227 (1985).CrossRefGoogle Scholar
18. Bean, J. C., Feldman, L. C., Fiory, A. T., Nakahara, S., and Robinson, I. K., J. Vac. Sci. Tech. A, 2, 436 (1984).CrossRefGoogle Scholar
19. Hull, R., Gibson, J. M., and Bean, J. C., Appl. Phys. Lett., 46, 179 (1985).CrossRefGoogle Scholar
20. M, A. S.. Salih, Ryu, J. S., Rozgonyi, G. A., and Bean, K. E., J. Electrochem. Soc., 133 475 (1986).Google Scholar
21. Suzuki, S. and Itoh, T., J. Appl. Phys., 54 1466 (1983).CrossRefGoogle Scholar