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Growth of Ge/Si Amorphous Superlattices by Dual-Target DC Magnetron Sputtering

Published online by Cambridge University Press:  21 February 2011

K. Järrendahl ,
J. Birch ,
L. Hultman ,
L.R. Wallenberg ,
G. Radnoczi ,
H. Arwin  and
J-E. Sundgren
K. Järrendahl
Affiliation:
Dept. of Physics, Thin Film Division, Linköping University, S-581 83 Linköping, Sweden
J. Birch
Affiliation:
Dept. of Physics, Thin Film Division, Linköping University, S-581 83 Linköping, Sweden
L. Hultman
Affiliation:
Dept. of Physics, Thin Film Division, Linköping University, S-581 83 Linköping, Sweden
L.R. Wallenberg
Affiliation:
Dept. of Physics, Thin Film Division, Linköping University, S-581 83 Linköping, Sweden
G. Radnoczi
Affiliation:
Dept. of Physics, Thin Film Division, Linköping University, S-581 83 Linköping, Sweden
H. Arwin
Affiliation:
Dept. of Physics, Thin Film Division, Linköping University, S-581 83 Linköping, Sweden
J-E. Sundgren
Affiliation:
Dept. of Physics, Thin Film Division, Linköping University, S-581 83 Linköping, Sweden
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Abstract

Amorphous Ge/Si superlattices have been grown by dual-target dc magnetron sputtering at ambient temperature under different negative substrate bias voltages Vs. The films were studied with cross-sectional transmission electron microscopy (XTEM). All films were amorphous, but for Vs ≤ 110 V the superlattices exhibited a columnar structure. Within each column, the compositional modulation was clearly resolved except in the vicinity of the column boundaries. For 110<VS≤250V, dense films with homogeneous and well-defined layers were obtained. High-resolution XTEM studies showed that superlattices with individual layer thicknesses less than 1.5 nm and smooth interfaces could be fabricated. Increasing Vs > 250 V resulted in ion induced intermixing such that at Vs ≥ 450 no compositional modulation was observed. The obtained structural results are discussed in terms of available models for ion-irradiation effects during low-temperature ballistic growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 571
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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