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Growth of Ge1−xCx, Alloys on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxy Method

Published online by Cambridge University Press:  15 February 2011

H. Shibata ,
S. Kimura ,
P. Fons ,
A. Yamada ,
Y. Makita ,
A. Obara ,
N. Kobayashi ,
H. Takahashi ,
H. Katsumata  and
J. Tanabe
...Show all authors
H. Shibata
Affiliation:
Electrotechnical Laboratory, 1-1–4 Umezono, Tsukuba, Ibaraki 305, Japan.
S. Kimura
Affiliation:
Electrotechnical Laboratory, 1-1–4 Umezono, Tsukuba, Ibaraki 305, Japan.
P. Fons
Affiliation:
Electrotechnical Laboratory, 1-1–4 Umezono, Tsukuba, Ibaraki 305, Japan.
A. Yamada
Affiliation:
Electrotechnical Laboratory, 1-1–4 Umezono, Tsukuba, Ibaraki 305, Japan.
Y. Makita
Affiliation:
Electrotechnical Laboratory, 1-1–4 Umezono, Tsukuba, Ibaraki 305, Japan.
A. Obara
Affiliation:
Electrotechnical Laboratory, 1-1–4 Umezono, Tsukuba, Ibaraki 305, Japan.
N. Kobayashi
Affiliation:
Electrotechnical Laboratory, 1-1–4 Umezono, Tsukuba, Ibaraki 305, Japan.
H. Takahashi
Affiliation:
Nippon Institute of Technology, 4-4-1, Gakuendai, Miyashirocho, Minamisaitama-gun, Saitama 345, Japan.
H. Katsumata
Affiliation:
Meiji University, 1-1-1 Higashi-Mita, Tama, Kawasaki, Kanagawa 214, Japan.
J. Tanabe
Affiliation:
Nippon Institute of Technology, 4-4-1, Gakuendai, Miyashirocho, Minamisaitama-gun, Saitama 345, Japan.
S. Uekusa
Affiliation:
Meiji University, 1-1-1 Higashi-Mita, Tama, Kawasaki, Kanagawa 214, Japan.
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Abstract

A combined ion beam and molecular beam epitaxy (CIBMBE) method was applied for the deposition of a Ge1−x, Cx, alloy on Si(100) using a low-energy ( 50 – 100 eV ) C+ ion beam and a Ge molecular beam. Metastable Ge1−xCx solid solutions were formed up to x= 0.047, and the CIBMBE method was shown to have a very high potential to grow metastable Ge1−xCx alloys. It was also revealed that the sticking coefficient of C+ ions into Ge was ˜28% for Ei = 100 eV and ˜18% for Ei. = 50 eV. Structural characterization suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Characterization of lattice dynamics using Raman spectroscopy suggested that the deposited layers have a small amount of ion irradiation damage.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 439: Symposium B – Microstructure Evolution During Irradiation , 1996 , 233
Copyright
Copyright © Materials Research Society 1997

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