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Growth of GaN on (100)Si Using a New C-H and N-H Free Single-Source Precursor

Published online by Cambridge University Press:  21 February 2011

John Kouvetakis ,
Jeffrey McMurran ,
David B. Beach  and
David J. Smith
John Kouvetakis
Affiliation:
Department of Chemistry and Biochemistry, Arizona State University, Tempe, AZ 85287-1604
Jeffrey McMurran
Affiliation:
Department of Chemistry and Biochemistry, Arizona State University, Tempe, AZ 85287-1604
David B. Beach
Affiliation:
Chemical and Analytical Science Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
David J. Smith
Affiliation:
Center for Solid State Science and Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287
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Abstract

We have demonstrated growth of crystalline GaN on Si substrates by using, for the first time, a novel inorganic precursor Cl2GaN3 and ultra-high-vacuum chemical vapor deposition techniques. Cross-sectional electron microscopy of the highly conformal films showed columnar growth of wurtzite GaN while Auger and RBS oxygen- and carbon-resonance spectroscopies showed that the films were pure and highly homogeneous. In addition to the high growth rates of 70–500 Å per minute, the low deposition temperature of 550–700 °C, and the nearly perfect GaN stoichiometry that we obtain, another notable advantage of our method is that it provides a carbon-free growth environment which is compatible with p-doping processes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 79
Copyright
Copyright © Materials Research Society 1996

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References

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