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Growth of GaN crystals under ammonothermal conditions

Published online by Cambridge University Press:  01 February 2011

Michael J. Callahan ,
Buguo Wang ,
Lionel O. Bouthillette ,
Sheng-Qi Wang ,
Joseph W. Kolis  and
David F. Bliss
Michael J. Callahan
Affiliation:
Sensors Directorate, Air Force Research Laboratory, Hanscom AFB, MA 01731, USA
Buguo Wang
Affiliation:
Department of Chemistry, Clemson University, SC 29634, USA
Lionel O. Bouthillette
Affiliation:
Sensors Directorate, Air Force Research Laboratory, Hanscom AFB, MA 01731, USA
Sheng-Qi Wang
Affiliation:
Solid State Scientific Corporation, 27–2 Wright Road, Hollis, NH 03049, USA
Joseph W. Kolis
Affiliation:
Department of Chemistry, Clemson University, SC 29634, USA
David F. Bliss
Affiliation:
Sensors Directorate, Air Force Research Laboratory, Hanscom AFB, MA 01731, USA
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Abstract

Growth of GaN bulk crystals under ammonothermal conditions has been developed. The experiments were performed in ammono-basic solutions in high nickel content autoclaves for up to 3 weeks. Nutrients were crystalline GaN made from vapor phase transport growth. Single crystal clusters of GaN on the order of 500 μm – 1 mm long were obtained. These crystals were spontaneously nucleated on the walls of the autoclave. Transport growth on polycrystalline GaN seeds and single crystal HVPE seeds was also achieved. GaN has a high solubility in ammono-basic solutions, on the order of several weight percent. The ammonothermal crystals were characterized by photoluminescence (PL), X-ray diffraction and SEM.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y2.10
Copyright
Copyright © Materials Research Society 2004

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References

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