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Growth of GaN, AlN and InN by Electron Cyclotron Resonance-Metal Organic Molecular Beam Epitaxy

Published online by Cambridge University Press:  22 February 2011

P. W. Wisk ,
C. R. Abernathy ,
S. J. Pearton ,
F. Ren ,
J. R. Lothian ,
A. Katz  and
K. Jones
P. W. Wisk
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
F. Ren
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
J. R. Lothian
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
A. Katz
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ 07974
K. Jones
Affiliation:
University of Florida, Gainsville, FL
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Abstract

We have investigated the feasibility of depositing GaN, AIN and InN from nitrogen plasmas by electron cyclotron resonance-metal organic molecular beam epitaxy (ECR-MOMBE). Growth rate, morphology, and resistivity were evaluated as function of growth temperature and group IB flux. It was found that stoichiometric materials could be deposited at reasonable growth rates on either GaAs or sapphire substrates. Low contact resistance, ∼5 × 10−7 Ω-cm2, can be obtained on In due to the high carrier concentrations, 1020 cm−3 obtained in this material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 599
Copyright
Copyright © Materials Research Society 1993

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References

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