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Growth of GaAs and GaP from TMG: A Comparison

Published online by Cambridge University Press:  26 February 2011

Markus Eyers  and
Michio Sato
Markus Eyers
Affiliation:
NTT Basic Research Laboratories, 3–9–11 Midori-cho, Musashino-shi, Tokyo 180, Japan
Michio Sato
Affiliation:
NTT Basic Research Laboratories, 3–9–11 Midori-cho, Musashino-shi, Tokyo 180, Japan
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Abstract

In the growth of GaAs and GaP from TMG strong differences are observed. Although the shape of the Arrhenius plot of the growth rate is similar, at low deposition temperatures the GaP growth rate is lower than that of GaAs. Additionally, more carbon is incorporated into GaP than into GaAs. Mass spectrometric studies on methyl desorption show that As has a stronger ability to aid the breaking of the final Ga-carbon bond than P.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 240: Symposium E – Advanced III-V Compound Semiconductor Growth, Processing and Devices , 1991 , 27
Copyright
Copyright © Materials Research Society 1992

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References

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