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Growth of Er Doped si Films by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition

Published online by Cambridge University Press:  21 February 2011

Jim L. Rogers ,
Walter J. Varhue  and
Edward Adams
Jim L. Rogers
Affiliation:
Dept. of Electrical Engineering, University of Vermont, Burlington, VT 05405
Walter J. Varhue
Affiliation:
Dept. of Electrical Engineering, University of Vermont, Burlington, VT 05405
Edward Adams
Affiliation:
IBM Corp., Essex Junction, VT. 05452
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Abstract

Thin Si films doped with Er have been grown at low temperature by plasma enhanced chemical vapor deposition. The Er gas source is a sublimed organo-metallic compound fed into the process chamber. High doping concentrations without precipitation are possible because of the low deposition temperatures. The process relies on the beneficial effects of low energy ion bombardment to reduce the growth temperature. The ions as well as reactive chemical species are produced by an electron cyclotron resonance (ECR) plasma stream source. A hydrogen plasma stream is used to perform an in-situ pre-deposition clean to remove oxide from the Si surface. Film crystallinity and impurity concentration are determined by Rutherford backscattering spectrometry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 49
Copyright
Copyright © Materials Research Society 1993

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References

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