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Growth of Epitaxial LaVO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 Heterostructures

Published online by Cambridge University Press:  21 March 2011

Woong Choi  and
Tim Sands
Woong Choi
Affiliation:
Department of Materials Science & Engineering, University of CaliforniaBerkeley, CA 94720
Tim Sands
Affiliation:
Department of Materials Science & Engineering, University of CaliforniaBerkeley, CA 94720
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Abstract

Epitaxial semiconductor-ferroelectric-conductor LaVO3/(Pb,La)(Zr,Ti)O3/(La,Sr)CoO3 heterostructures were grown on (001) LaAlO3 single crystal substrates by pulsed laser deposition. A high degree of c-axis orientation and strong in-plane texture revealed by x-ray diffraction indicated the epitaxial crystallographic relationships between the layers. The capacitance measurement as a function of voltage revealed the modulation of the depletion layer in the semiconducting LaVO3 as well as the non-linear response of the (Pb,La)(Zr,Ti)O3 ferroelectric layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 666: Symposium F – Transport and Microstructural Phenomena , 2001 , F11.8
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Ahn, C., Triscone, J., Ardchibald, N., Decroux, M., Hammond, R., Geballe, T., Fisher, O. and Beasley, M., Science 269, 373 (1995).Google Scholar
2. Watanabe, Y., Appl. Phys. Lett. 66, 1770 (1995).Google Scholar
3. Mathews, S., Ramesh, R., Venkatesan, T. and Benedetto, J., Science 276, 238 (1997).Google Scholar
4. Kim, S. and Lee, J., Integr. Ferroel. 18, 405 (1997).Google Scholar
5. Grishin, A., Khartsev, S. and Johnsson, P., Appl. Phys. Lett. 74, 1015 (1999).Google Scholar
6. Wu, S., IEEE Trans. Elect. Devices 21, 499 (1974).Google Scholar
7. Choi, W., Sands, T. and Kim, K., J. Mater. Res. 15, 1 (2000).Google Scholar
8. Prasad, E., Sayer, M. and Noad, J., Phys. Rev. B 19, 5144 (1979).Google Scholar