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Growth of Epitaxial Inas Nanowires in a Simple Closed System

Published online by Cambridge University Press:  26 February 2011

Hyun D Park ,
Sharka M Prokes  and
Robert C Cammarata
Hyun D Park
Affiliation:
[email protected], Johns Hopkins University, Materials Science & Engineering, 102 Maryland Hall, Johns Hopkins University, 3400 North Charles Street, Baltimore, Maryland, 21218, United States
Sharka M Prokes
Affiliation:
[email protected]
Robert C Cammarata
Affiliation:
[email protected]
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Abstract

The epitaxial growth of InAs nanowires on an InAs (111) substrate in a sealed quartz tube is described. The method is quite simple and fast, and uses only a bare InAs substrate and a gold colloid coated InAs (111) substrate. High quality InAs nanowires can be produced by this technique.

Keywords

nanostructureInAs
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 901: Symposium R – Assembly at the Nanoscale – Toward Functional Nanostructured Materials , 2005 , 0901-Rb14-03
Copyright
Copyright © Materials Research Society 2006

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References

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