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Growth of Epitaxial Cu/TiN/6H-SiC(0001) Heterostructures by Pulsed Laser Deposition

Published online by Cambridge University Press:  15 February 2011

A. Kvit ,
A.K. Sharma  and
J. Narayan
A. Kvit
Affiliation:
NSF Center for Advanced Materials and Smart Structures; Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
A.K. Sharma
Affiliation:
NSF Center for Advanced Materials and Smart Structures; Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
J. Narayan
Affiliation:
NSF Center for Advanced Materials and Smart Structures; Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695
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Abstract

Epitaxial Cu/TiN heterostructures were grown on hexagonal (6H)-SiC(0001) substrate by pulsed laser deposition using the domain epitaxy, where integral multiple of lattice constant or major planes match across the interface1. Such layers are needed for metallization of SiC bond integrated circuit devices. These Cu and TiN layers on SiC(0001) were grown at 600 degrees centigrade in a high vacuum (<10−6 Torr). This structure was characterized using X-ray diffraction technique and transmission electron microscopy. The X-ray diffraction recorded only (111) and (222) reflection of Cu and TiN. The full-width at half maximum of ω-rocking curve of (111) reflection of Cu (0.4 degree) and TEM results indicated a high epitaxial quality. The plan view transmission electron micrograph shows that Cu forms three-dimensional islands indicating that the Cu/TiN interface energy is very high. The island size varies from 0.2 to 2 μm. Analysis of selective aperture diffraction patterns and cross-sectional transmission electron microscopy, including high-resolution imaging, showed relationships Cu(111)//TiN(111)//6H-SiC(0001). The TiN/SiC an interface was locally atomically sharp and free from secondary phases or obvious interdiffusion. The typical defects in the TiN(111) layers consisted of threading domain boundaries. The mechanism of three-dimension growth of copper on TiN layers was discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 580: Symposium E – Nucleation & Growth Processes in Materials , 1999 , 159
Copyright
Copyright © Materials Research Society 2000

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References

1 Narayan, J., Tiwary, P., Chen, X., Singh, J., Chowdhury, R., Zheleva, T., Appl. Phys. Lett. 61, p. 1290 (1991); U.S. Patent No. 5 406 123 (11 April 1995).Google Scholar
2 Glass, R. C., Spellman, L. M., Tanaka, S., and Davis, R. F., J. Vac. Sci. Technol. A 10, p. 1625 (1992).Google Scholar
3 Hultman, L., Ljungcrantz, H., Hallin, C., Janzen, E., Sundgren, J-E., Pecz, B., Wallenberg, L. R., J. Mater. Res. 11, No.10, p. 2458 (1996).Google Scholar
4 Li, J., Diamond, Y. S., Mayer, J. W., Mater. Sci. Rep. 9, p. 1 (1992).Google Scholar
5 Chamberlain, M. B., Thin Solid Films 91, p. 155 (1982).Google Scholar
6 Olowolafe, J. O., Li, J., Mayer, J. W., Colgan, E. G., Appl. Phys. Lett. 58, p. 469 (1991).Google Scholar
7 Vispute, R. D., Chowdhury, R., Tiwari, P., Narayan, J., Appl.Phys. Lett. 65, p. 2565 (1994).Google Scholar
8 Teraji, T., Hara, S., Okushi, H., Kajimura, K., Appl. Phys. Lett. 71, p. 689 (1997).Google Scholar
9 Tianyou, P., Weizhou, P., Advanced Structural Inorganic Composites, Proceedings of the Satellite Symposium 2 on Advanced Structural Inorganic Composites of the 7th International Meeting on Modern Ceramics Technologies, Elsevier, Amsterdam, Netherlands; xv+825, p. 151 (1991).Google Scholar
10 Lee, H. K.; Lee, J. Y., Journal of Materials Science Letters 11, No.9, p. 550 (1992).Google Scholar
11 Pashley, D. W., in Epitaxial Growth, Part A, edited by Matthews, J.W. (Academic, New York, 1975).Google Scholar
12 Kingery, W. D., Bowen, H. K, Uhlmann, D. R., in Introduction to Ceramics, edited by Burke, E., Chalmers, B. & Krumhansl, J. A., (A.. Wiley- Interscience Publication, John Wiley & Sons, New York, Cichester, Brisbane, Toronto; USA & Canada, 1975), p.208.Google Scholar
13 Suvorov, A.. V., Lebedev, O. I., Suvorova, A. A., Van-Landuyt, J., Usov, I. O., Nuclear Instruments & Methods in Physics Research, Section B 127–128, p. 347 (1997).Google Scholar
14 Suvorov, A.. V., Lebedev, O. I., Suvorova, A. A., Van-Landuyt, J., Usov, I. O., Nuclear Instruments & Methods in Physics Research, Section B 127–128, p. 347 (1997).Google Scholar