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The Growth of Effective Potential Barrier Height in Au/ (100) n-GaP Contact Induced by Phosphorous Ion Implantation

Published online by Cambridge University Press:  26 February 2011

Anatol I. Ivashchenko ,
F.Ya. Kopanskaya ,
A. I. Solomonov  and
V. P. Tarchenko
Anatol I. Ivashchenko
Affiliation:
Institute of Applied Phyeice of AS of Rep. Moldova, Grosul str. 5, 277028, Kishinev
F.Ya. Kopanskaya
Affiliation:
Institute of Applied Phyeice of AS of Rep. Moldova, Grosul str. 5, 277028, Kishinev
A. I. Solomonov
Affiliation:
Polytechnic Institute, Laboratory of Microelectronics, Shtefan chel Mare str. I68, 2770I2, Kishinev
V. P. Tarchenko
Affiliation:
Polytechnic Institute, Laboratory of Microelectronics, Shtefan chel Mare str. I68, 2770I2, Kishinev
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Abstract

The effect of phosphorous ion implantation and/or rapid thermal treatment on the behaviour of Schottky barrier elect-rophysical characteristics formed on the plane (100) of n-GaP epitaxial layer is discussed. Even though the implantation and post implantation rapid annealing lead to the generation of deep recombination centers in the bulk, the dominant mechanism of current transport across the barrier structure becomes thermo-ionic - like in initial samples. The analysis of the behaviour of forward current-voltage characteristics, steady state capacitance-voltage characteristics and DLTS data allow to conclude that the obtained reduction of forward current after ion im- plactation can be attributed to an increase of effective potenia! barrier height.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1115
Copyright
Copyright © Materials Research Society 1992

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References

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