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Growth of detector-grade CZT by Traveling Heater Method (THM): An advancement

Published online by Cambridge University Press:  12 October 2011

U. N. Roy ,
S. Weiler ,
J. Stein ,
M. Groza ,
A. Burger ,
A. E. Bolotnikov ,
G. S. Camarda ,
A. Hossain ,
G. Yang  and
R. B. James
U. N. Roy
Affiliation:
FLIR Radiation Inc., 100 Midland Road, Oak Ridge, TN 37830
S. Weiler
Affiliation:
FLIR Radiation Inc., 100 Midland Road, Oak Ridge, TN 37830
J. Stein
Affiliation:
FLIR Radiation Inc., 100 Midland Road, Oak Ridge, TN 37830
M. Groza
Affiliation:
Department of Physics, 1000, 17th Avenue North, Fisk University, Nashville, TN 37208
A. Burger
Affiliation:
Department of Physics, 1000, 17th Avenue North, Fisk University, Nashville, TN 37208
A. E. Bolotnikov
Affiliation:
Brookhaven National Laboratory, Upton, NY 11793
G. S. Camarda
Affiliation:
Brookhaven National Laboratory, Upton, NY 11793
A. Hossain
Affiliation:
Brookhaven National Laboratory, Upton, NY 11793
G. Yang
Affiliation:
Brookhaven National Laboratory, Upton, NY 11793
R. B. James
Affiliation:
Brookhaven National Laboratory, Upton, NY 11793
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Abstract

In this present work we report the growth of Cd0.9Zn0.1Te doped with In by a modified THM technique. It has been demonstrated that by controlling the microscopically flat growth interface, the size distribution and concentration of Te inclusions can be drastically reduced in the as-grown ingots. This results in as-grown detector-grade CZT by the THM technique. The three-dimensional size distribution and concentrations of Te inclusions/precipitations were studied. The size distributions of the Te precipitations/inclusions were observed to be below the 10-μm range with the total concentration less than 105 cm-3. The relatively low value of Te inclusions/precipitations results in excellent charge transport properties of our as-grown samples. The (μτ)e values for different as-grown samples varied between 6-20 x10-3 cm2/V. The as-grown samples also showed fairly good detector response with resolution of ∼1.5%, 2.7% and about 3.8% at 662 keV for quasi-hemispherical geometry for detector volumes of 0.18 cm3, 1 cm3 and 4.2 cm3, respectively.

Keywords

crystal growthsemiconductingII-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1341: Symposium U – Nuclear Radiation Detection Materials , 2011 , mrss11-1341-u02-02
Copyright
Copyright © Materials Research Society 2011

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References

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