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Growth of CVD graphene on copper by rapid thermal processing

Published online by Cambridge University Press:  30 July 2012

W. Kim ,
J. Riikonen ,
S. Arpiainen ,
O. Svensk ,
C. Li  and
H. Lipsanen
W. Kim
Affiliation:
Department of Micro- and Nanosciences, Aalto University, FI-00076, Espoo, Finland
J. Riikonen
Affiliation:
Department of Micro- and Nanosciences, Aalto University, FI-00076, Espoo, Finland
S. Arpiainen
Affiliation:
VTT Microsystems and Nanoelectronics, FI-02044, Espoo, Finland
O. Svensk
Affiliation:
Department of Micro- and Nanosciences, Aalto University, FI-00076, Espoo, Finland
C. Li
Affiliation:
Department of Micro- and Nanosciences, Aalto University, FI-00076, Espoo, Finland
H. Lipsanen
Affiliation:
Department of Micro- and Nanosciences, Aalto University, FI-00076, Espoo, Finland
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Abstract

We have investigated the fabrication of graphene by chemical vapor deposition using a conventional rapid thermal processing system with infrared heating. Graphene films were grown on the pretreated copper foil in RTP at 935-960°C at pressure of 6~7 mbar. The grown films were characterized by scanning electron microscope and Raman spectroscopy to investigate morphology of graphene. The growth of graphene was initiated by small flakes that spread rapidly covering the whole copper surface as a single-layer film in ~20 seconds. Room temperature mobility and sheet resistance extracted by transfer-length method (TLM) for the graphene film transferred onto the SiO2/Si substrate were around 1,800 cm2/Vs and 260 Ω/ð with the gate voltage, respectively.

Keywords

chemical vapor deposition (CVD) (deposition)CuRaman spectroscopy
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1451: Symposium DD/EE – Nanocarbon Materials and Devices , 2012 , pp. 27 - 32
Copyright
Copyright © Materials Research Society 2012

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References

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