Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T17:54:23.993Z Has data issue: false hasContentIssue false
  • English
  • Français

Growth of Cuinse2 on (lOO) Gaas by Molecular Beam Epitaxy

Published online by Cambridge University Press:  15 February 2011

Bae-Heng Tseng  and
Song-Bin Lin
Bae-Heng Tseng
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC.
Song-Bin Lin
Affiliation:
Institute of Materials Science and Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan, ROC.
Get access

Abstract

Domain-free epitaxial layer of CuInSe2 has been successfully grown on (lOO) GaAs at the substrate temperature above 470°C. Both TEM and X-ray analyses were performed to verify this result. The CuInSe2/GaAs interface was examined by high resolution TEM. For films high in indium, InSe was identifed by X-ray diffraction. TEM observations showed that the InSe precipitates were rectangular in shape and the habit plane was determined to be (110). Photo-assisted MBE technique had also been used for the growth of CuInSe2 films with high crystalline quality. The epitaxial temperature was significantly reduced to 300°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 317: Symposium B – Mechanisms of Thin Film Evolution , 1993 , 187
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Michalsen, R. A. and Chen, W.S., Proc. 16th IEEE Photovoltaic Specialists Conf., p. 781 (1982).Google Scholar
2. Mitchell, K., Eberspacher, C., Ermer, J. and Pier, D., Proc. 20th IEEE Photovoltaic Specialists Conf., p. 1384 (1988).Google Scholar
3. Stolt, L., Hedsrom, J., Kessler, J., Ruckh, M., Velthaus, K.O., and Schock, H.-W, Appl. Phys. Lett., 62, 597 (1993).Google Scholar
4. Schock, H.-W., presented at The 9th International Conference on Ternary and Multinary Compounds, Yokohama, Japan (1993).Google Scholar
5. Schumann, B., Tempel, A. and Kuhn, G., Solar Cells, 16, 43 (1986).Google Scholar
6. Tempel, A., Schumann, B., Kolb, K. and Kuhn, G., J. CrystalGrowth, 54, 534 (1981).Google Scholar
7. Schumann, B., Georgi, C., Tempel, A. and Kuhn, G., Thin Solid Films, 52, 45 (1978).Google Scholar
8. Tseng, B.H. and Wert, C.A., J. Appl. Phys., 65, 2254 (1989).Google Scholar
9. Bicknell, R.N., Giles, N.C., and Schezina, J.F., Appl. Phys. Lett., 49, 1735 (1986).Google Scholar
10. Benson, J.D., Rajavel, D., Wagner, B.K., Benz, R. II, and Summers, C.J., J. Crystal Growth, 95, 543 (1989).Google Scholar
11. Kitagawa, M., Tomomura, Y., Nakanishi, K., Suzuki, A., and Nakajima, S., J. Crystal Growth, 101. 52 (1990).Google Scholar