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Growth of Columnar SiC on Patterned Si Substrates by CVD

Published online by Cambridge University Press:  11 February 2011

Shigehiro Nishino ,
Yoichi Okui ,
Yuehai Tai  and
Chacko Jacob
Shigehiro Nishino
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606–8585, Japan
Yoichi Okui
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606–8585, Japan
Yuehai Tai
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606–8585, Japan
Chacko Jacob
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606–8585, Japan
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Abstract

Single crystalline 3C-SiC films have been grown on Si(111) substrate at 1200°C by conventional CVD process using HMDS (Hexamethyldisilane). Before columnar growth of SiC, columnar Si was made by depositing Au on Si(111) substrate as a solvent of VLS mechanism. Si growth was carried out by disproportional reaction in halide transport method. The columnar Si was produced on the patterned substrates. The columnar Si was covered by SiC. Needle like columns of SiC can be used for MEMS application such as micro-heat exchanger.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K1.7
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Ishida, M., Sogawa, K., Ishikawa, A., and Fujii, M., Proc. of Transducers'99, 866–869. (2000) 59.Google Scholar
2. Nicoll, F. H., J. Electrochem. Soc. 110, (1963) 1165.Google Scholar
3. Flicker, H. and Goldstein, B., J. Appl. Phys. 35, no. 10, (1964) pp.2959–2962.Google Scholar
4. Wagner, R. S., Ellis, W.C., Jackson, K.A. and Arnold, S.M., J. Appl. Phys. 35 (1964) 2993.Google Scholar
5. Nishino, S., Suhara, H., Ono, H., and Matsunami, H., J. Appl. Phys. 61 (1987) p. 4889.Google Scholar
6. Shibahara, K., Nishino, S., and Matsunami, H., J. Cryst. Growth 78 (1986) p. 538.Google Scholar
7. Steckl, A. J., Yuan, C., Li, J. P., and Loboda, M. J., Appl. Phys. Lett. 63(1993) p.3347.Google Scholar
8. Golecki, I., Reidinger, F., and Marti, J., Appl. Phys. Lett. 60(1992) p.1703.Google Scholar
9. Wu, C. H., Jacob, C., Ning, X. J., Nishino, S., Pirouz, P., J. Cryst. Growth 158(1996) p.480.Google Scholar
10. Takahashi, K., Nishino, S., and Saraie, J., J. Electrochem. Soc., Vol. 139 (1992) p. 3564.Google Scholar
11. Chaudhry, M. I., McCluskey, R. J., Wright, R. L., J. Cryst. Growth 113(1991) p.120 Google Scholar
12. Jacob, C., Pirouz, P., and Nishino, S., Materials Science Forum vol. 353–356(2001) p. 127.Google Scholar