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Growth of CdTe Thin Films on Polar and Nonpolar Semiconductor Substrates by Metalorganic Chemical Vapor Deposition.

Published online by Cambridge University Press:  26 February 2011

P. Grodzinski ,
J.H. Mazur ,
A. Nouhi ,
R.J. Stirn  and
R. Sudharsananu
P. Grodzinski
Affiliation:
Materials Science Department, University of Southern California, Los Angeles, CA 90089-0241
J.H. Mazur
Affiliation:
Materials Science Department, University of Southern California, Los Angeles, CA 90089-0241
A. Nouhi
Affiliation:
Jet Propulsion Laboratory, Pasadena, CA 91109
R.J. Stirn
Affiliation:
Jet Propulsion Laboratory, Pasadena, CA 91109
R. Sudharsananu
Affiliation:
Microelectronics Center. School of Electrical Engineering, Georgia Institute of Technology, GA 30332.
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Abstract

Electron diffraction and high resolution electron microscopy (HREM) have been used to investigate the origin of multiple orientation-relationships and defect structure of CdTe thin films grown on (100) GaAs and Si substrates by metal- organic chemical vapor deposition (MOCVD). It has been determined that growth at 370°C with pre-exposure of the GaAs surface to Te following oxide desorption treatment at 600°C resulted in non-parallel epitaxy ((111)CdTe // (100)GaAs), while growth at 300°C following oxide desorption at 500°C with no exposure to Te resulted in parallel epitaxy ((100)CdTe // (100)GaAs). Both epitaxial orientation-relationships were observed on the same substrate for growth at 300°C temperature after 600°C oxide desorption treatment, but with no pre-exposure of the GaAs surface to Te. Preliminary results of growth of CdTe on Si are also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 115
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Otsuka, N., Choi, C., Fischer, R., Peng, C.K., Morkoc, H., Nakamura, Y., and Nagakura, S., J. Vac. Sci. Technol. B4, 896 (1986).Google Scholar
2. Strikman, H., Oran, M., Raizman, A., and Cinader, G., J. Electronic Mat. 17, 105 (1988).CrossRefGoogle Scholar
3. Mazur, J.H., Grodzinski, P., Nouhi, A., and Stirn, R.J. in Epitaxy of Semiconductor Layered Structures, edited by Tung, R.T., Dawson, L.R., and Gunshor, R.L. (Mater. Res. Soc. Proc. 102, Pittsburgh, PA 1988), pp. 337–340.Google Scholar
4. Kolodziejski, L.A., Gunshor, R.L., Otsuka, N., and Choi, C. in Layered Structures and Epitaxy, edited by Gibson, J.M., Osbourn, G.C., and Tromp, R.M. (Mater. Res. Soc. Proc. 56, Pittsburgh, PA 1986), pp. 91–96.Google Scholar
5. Kolodziejski, L.A., Gunshor, R.L., Otsuka, N., and Choi, C.. J. Vac. Sci. Technol. A4, 2150 (1986).CrossRefGoogle Scholar
6. Nouhi, A. and Stirn, R.J., Appl. Phys. Lett. 51, 2251 (1987).Google Scholar
7. Brown, P.D., Hails, J.E., Russell, G.J., and Woods, J., Appl. Phys. Lett. 50, 1144 (1987).Google Scholar
8. Ponce, F.A., Anderson, G.B., and Ballingall, J.M. in Materials for Infrared Detectors and Sources, edited by Torrow, R.F.C., Schetzina, J.F., and Cheung, J.T. (Mat. Res. Soc. Proc. 90, Pittsburgh, PA 1987), pp. 199–209.Google Scholar
9. Cohen - Solal, G., Bailly, F., and Barbe, M., Appl. Phys. Lett. 49, 1519 (1986).Google Scholar
10. Feldman, R.D., Austin, R.F., Kisker, D.W., Jeffers, K.S., and Bridenbaugh, P.M., Appl. Phys. Lett. 48, 248 (1986).Google Scholar
11. Liu, M.S. and Chou, R.L., J. Crystal Growth 77,475 (1986).Google Scholar