Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-29T07:40:29.769Z Has data issue: false hasContentIssue false

Growth of an InGaAs/Alingaas Mqw Non-Linear Etalon with Integrated 1.5μm GaInAsP/InP Epitaxial BRAGG Reflector

Published online by Cambridge University Press:  21 February 2011

A.J. Dann
Affiliation:
BT Laboratories, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom.
M.A. Salter
Affiliation:
BT Laboratories, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom.
M.A. Fisher
Affiliation:
BT Laboratories, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom.
I. Reid
Affiliation:
BT Laboratories, Martlesham Heath, Ipswich, IP5 7RE, United Kingdom.
D.T. Neilson
Affiliation:
Department of Physics, Heriot-Watt University, Riccarton, Edinburgh, EH14 4AS, United Kingdom.
J.E. Ehrlich
Affiliation:
Department of Physics, Heriot-Watt University, Riccarton, Edinburgh, EH14 4AS, United Kingdom.
A.C. Walker
Affiliation:
Department of Physics, Heriot-Watt University, Riccarton, Edinburgh, EH14 4AS, United Kingdom.
Get access

Abstract

The Gas Source MBE growth of high quality GaInAsP/InP Bragg reflector stacks for operation at 1.5μm followed by growth of an MOVPE AlInGaAs/InGaAs MQW structure is demonstrated. An asymmetric Fabry-Perot non-linear etalon structure was completed by dielectric mirror deposition. A clear bistable response was observed for the device as a function of incident light intensity, with low critical switching power (<lmW) and excellent thermal stability.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Gibbs, H.M., Optical bistability: controlling light with light, (Academic Press, Orlando, 1984).Google Scholar
2 Goodwill, D.J., Walker, A.C., Kean, A.H. and Stanley, C.R., Electron. Lett. 28, 1599 (1993).Google Scholar
3 Nonaka, K., Kawamura, Y., Kawaguchi, H. and Kubodera, K., Appl. Phys.Lett. 56 2062 (1990).Google Scholar
4 Wittgreffe, J.P., Yates, M.J., Perrin, S.D. and Spurdens, P.C., J. Cryst. Growth 130 51 (1992).Google Scholar
5 Neilson, D.T., Ehrlich, J.E., Walker, A.C., Dann, A.J., Fisher, M.A., Salter, M.A. and Reid, I., Electron. Lett. 29 1374 (1993).Google Scholar