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Growth of an InGaAs/Alingaas Mqw Non-Linear Etalon with Integrated 1.5μm GaInAsP/InP Epitaxial BRAGG Reflector
Published online by Cambridge University Press: 21 February 2011
Abstract
The Gas Source MBE growth of high quality GaInAsP/InP Bragg reflector stacks for operation at 1.5μm followed by growth of an MOVPE AlInGaAs/InGaAs MQW structure is demonstrated. An asymmetric Fabry-Perot non-linear etalon structure was completed by dielectric mirror deposition. A clear bistable response was observed for the device as a function of incident light intensity, with low critical switching power (<lmW) and excellent thermal stability.
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- Copyright © Materials Research Society 1994