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Growth of AlN Single Crystals

Published online by Cambridge University Press:  10 February 2011

Glen A. Slack
Glen A. Slack*
Affiliation:
Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute Troy, NY 12180
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Abstract

Aluminum nitride is a wurtzite structure III–V compound, although epitaxial layers of zincblende structure AIN have been made. AlN melts congruently at 2750°C with dissociation pressure of 9 atmospheres. Boules of AIN have been successfully grown by a sublimation-recondensation technique at 2300°C employing tungsten crucibles. Growth rates of 0.3 mm per hour were attained at 1 bar pressure of N2, and crystals up to 22 mm long have been grown. An analysis of the growth process shows that the 9.75eV dissociation energy of N2 is the limiting factor in the growth rate. The growth rate is predicted to depend on the N2 pressure, but no experiments in this area have yet been concluded. The most satisfactory crucible material found so far for growing AIN is single crystal tungsten.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 512: Symposium F – Wide Bandgap Semiconductors for High Power, High Frequency , 1998 , 35
Copyright
Copyright © Materials Research Society 1998

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