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Growth of (0001) ZnO Thin Films on Sapphire

Published online by Cambridge University Press:  10 February 2011

A. J. Drehman  and
P. W. Yip
A. J. Drehman
Affiliation:
Rome Laboratory, USAF, RL/ERX, 80 Scott Dr., Hanscom AFB, MA 01731
P. W. Yip
Affiliation:
Rome Laboratory, USAF, RL/ERX, 80 Scott Dr., Hanscom AFB, MA 01731
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Abstract

Using reactive rf sputtering, we have grown (0001) oriented ZnO films in situ on heated c-axis sapphire substrates, that are promising, particularly in terms of surface roughness, as buffer layers for the subsequent epitaxial growth of III-V nitride films. We compare the effects of on-axis and off-axis sputter geometries on the film epitaxy and smoothness. We also examined the effect of substrate temperature on the growth and smoothness and quality of the film. X-ray diffraction was used to verify the hexagonal ZnO phase, its c-axis orientation and, qualitatively, the degree of its epitaxy. Atomic Force Microscopy (AFM) was used to determine the ZnO growth morphology and roughness. Our best films, obtained by off-axis sputter deposition, have a surface roughness of less than 1 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 337
Copyright
Copyright © Materials Research Society 1997

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References

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