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Growth Mechanisms During Si/Ge Deposition

Published online by Cambridge University Press:  16 February 2011

John E. Crowell ,
Guangquan Lu  and
Bob M. J. Ning
John E. Crowell
Affiliation:
Department of Chemistry, University of California at San Diego, La Jolla, CA 92093–0314
Guangquan Lu
Affiliation:
Department of Chemistry, University of California at San Diego, La Jolla, CA 92093–0314
Bob M. J. Ning
Affiliation:
Department of Chemistry, University of California at San Diego, La Jolla, CA 92093–0314
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Abstract

The adsorption and decomposition behavior of disilane and digermane are quite similar on the Ge(111) surface. Both precursors are weakly bound at low temperatures, but dissociatively adsorb at temperatures above 150K. Trihydride species are produced and stable at low temperatures, but decompose to di- and monohydride species at slightly higher temperatures. The desorption of hydrogen from the resulting layer is strongly dependent on the Si and Ge composition of the layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 189
Copyright
Copyright © Materials Research Society 1991

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References

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